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Electrical properties of BaTiO3 based – MFIS heterostructure: Role of semiconductor channel carrier concentration
Effect of semiconductor channel carrier concentration on the modifications in the electrical properties of Ag/BaTiO3/SrTiO3/ZnO Metal-Ferroelectric-Insulator-Semiconductor (MFIS) heterostructure has been investigated. Under 4 V applied voltage, low leakage current density ∼3.2 × 10−6 A/cm2, has been...
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| Published in: | AIP advances 2014-05, Vol.4 (5), p.057131-057131-7 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c428t-b33a55ab0bda5c41156462e65767237ac2b38582a5ecbb12a279c6884ff1429a3 |
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| cites | cdi_FETCH-LOGICAL-c428t-b33a55ab0bda5c41156462e65767237ac2b38582a5ecbb12a279c6884ff1429a3 |
| container_end_page | 057131-7 |
| container_issue | 5 |
| container_start_page | 057131 |
| container_title | AIP advances |
| container_volume | 4 |
| creator | Vagadia, Megha Ravalia, Ashish Solanki, P. S. Pandey, Parul Asokan, K. Kuberkar, D. G. |
| description | Effect of semiconductor channel carrier concentration on the modifications in the electrical properties of Ag/BaTiO3/SrTiO3/ZnO Metal-Ferroelectric-Insulator-Semiconductor (MFIS) heterostructure has been investigated. Under 4 V applied voltage, low leakage current density ∼3.2 × 10−6 A/cm2, has been observed in ZnO based MFIS heterostructure, which becomes ∼5.0 × 10−6 A/cm2 for MFIS with Al:ZnO channel. Observation of counterclockwise butterfly shaped C-V behavior confirms that, hysteresis in C-V is due to spontaneous ferroelectric polarization and field effect. A device with ZnO semiconductor exhibit ∼2700% modulation which decreases to ∼800% for Al: ZnO channel with good retention behavior. Pulse induced write/erase repeatability of source/drain current confirms the usefulness of the presently studied devices for non-volatile switching memory application. |
| doi_str_mv | 10.1063/1.4880496 |
| format | article |
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A device with ZnO semiconductor exhibit ∼2700% modulation which decreases to ∼800% for Al: ZnO channel with good retention behavior. Pulse induced write/erase repeatability of source/drain current confirms the usefulness of the presently studied devices for non-volatile switching memory application.</description><subject>Barium titanates</subject><subject>Carrier density</subject><subject>Electrical properties</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Heterostructures</subject><subject>Leakage current</subject><subject>Memory devices</subject><subject>Silver</subject><subject>Strontium titanates</subject><subject>Zinc oxide</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>AJDQP</sourceid><sourceid>DOA</sourceid><recordid>eNqdkc1OWzEQha9QkUCQBW9gqatWSvB_7O5axE8kEBKEtTXXdy44ulyntoPUXd-BN-yT1CSo7bre2DP6dOb4TNOcMDpjVItTNpPGUGn1XnPImTJTwbn-8M_7oJnkvKL1SMuokYdNPh_QlxQ8DGSd4hpTCZhJ7Mk3WIZbQVrI2JFfP1_JzcXinjxhwRRzSRtfNgm_kLs44Bue8Tn4OHa1HxPxTzCOOBAPKQWsdRw9jiVBCXE8bvZ7GDJO3u-j5uHifHl2Nb2-vVycfb2eeslNmbZCgFLQ0rYD5SVjSkvNUau5nnMxB89bYZThoNC3LePA59ZrY2TfM8ktiKNmsdPtIqzcOoVnSD9chOC2jZgeHdTv-gFdleskUuOt1hIRgHdCSmsBZEfR8qr1cadVQ_q-wVzcKm7SWO07znh1RJWVlfq0o3zNKCfs_0xl1L2tyDH3vqLKft6x2YeyzeX_4JeY_oJu3fXiN0Z6n-g</recordid><startdate>20140501</startdate><enddate>20140501</enddate><creator>Vagadia, Megha</creator><creator>Ravalia, Ashish</creator><creator>Solanki, P. 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Observation of counterclockwise butterfly shaped C-V behavior confirms that, hysteresis in C-V is due to spontaneous ferroelectric polarization and field effect. A device with ZnO semiconductor exhibit ∼2700% modulation which decreases to ∼800% for Al: ZnO channel with good retention behavior. Pulse induced write/erase repeatability of source/drain current confirms the usefulness of the presently studied devices for non-volatile switching memory application.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4880496</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record> |
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| source | AIP Open Access Journals; Free Full-Text Journals in Chemistry |
| subjects | Barium titanates Carrier density Electrical properties Ferroelectric materials Ferroelectricity Heterostructures Leakage current Memory devices Silver Strontium titanates Zinc oxide |
| title | Electrical properties of BaTiO3 based – MFIS heterostructure: Role of semiconductor channel carrier concentration |
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