Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors

The characterization of total ionizing dose (TID) damage in COTS pinned photodiode (PPD) CMOS image sensors (CISs) is investigated. The radiation experiments are carried out at a 60Co γ-ray source. The CISs are produced by 0.18-μm CMOS technology and the pixel architecture is 8T global shutter pixel...

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Bibliographic Details
Published in:AIP advances 2016-03, Vol.6 (3), p.035205-035205-10
Main Authors: Wang, Zujun, Ma, Wuying, Huang, Shaoyan, Yao, Zhibin, Liu, Minbo, He, Baoping, Liu, Jing, Sheng, Jiangkun, Xue, Yuan
Format: Article
Language:English
Subjects:
CMOS
COBALT 60
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DAMAGE
DARK CURRENT
Digital cameras
GAIN
GAMMA RADIATION
IRRADIATION
PHOTODIODES
PHYSICAL RADIATION EFFECTS
Pixels
QUANTUM EFFICIENCY
Radiation damage
RADIATION DOSES
Random noise
RANDOMNESS
SATURATION
SENSORS
SIGNAL-TO-NOISE RATIO
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Summary:The characterization of total ionizing dose (TID) damage in COTS pinned photodiode (PPD) CMOS image sensors (CISs) is investigated. The radiation experiments are carried out at a 60Co γ-ray source. The CISs are produced by 0.18-μm CMOS technology and the pixel architecture is 8T global shutter pixel with correlated double sampling (CDS) based on a 4T PPD front end. The parameters of CISs such as temporal domain, spatial domain, and spectral domain are measured at the CIS test system as the EMVA 1288 standard before and after irradiation. The dark current, random noise, dark signal non-uniformity (DSNU), photo response non-uniformity (PRNU), overall system gain, saturation output, dynamic range (DR), signal to noise ratio (SNR), quantum efficiency (QE), and responsivity versus the TID are reported. The behaviors of the tested CISs show remarkable degradations after radiation. The degradation mechanisms of CISs induced by TID damage are also analyzed.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4943674