Effect of stress voltage on the dynamic buffer response of GaN-on-silicon transistors

Back-gated measurements on conductive silicon substrates have been performed to investigate the effect of stress voltage on the dynamic behaviour of GaN-on-silicon (GaN-on-Si) transistors. Two comparable samples were studied with the only difference being the vertical dislocation density. Results sh...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2016-04, Vol.119 (13)
Main Authors: Yacoub, H., Fahle, D., Eickelkamp, M., Wille, A., Mauder, C., Heuken, M., Kalisch, H., Vescan, A.
Format: Article
Language:English
Subjects:
Applied physics
Buffers
Dislocation density
Electric potential
Gallium nitrides
Semiconductor devices
Silicon substrates
Silicon transistors
Stresses
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Back-gated measurements on conductive silicon substrates have been performed to investigate the effect of stress voltage on the dynamic behaviour of GaN-on-silicon (GaN-on-Si) transistors. Two comparable samples were studied with the only difference being the vertical dislocation density. Results show a clear correlation between dislocation density and the ability of the GaN buffer to dynamically discharge under high stress conditions.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4944885