Sol-gel derived Al-Ga co-doped transparent conducting oxide ZnO thin films

• Main Authors: Serrao, Felcy Jyothi, Sandeep, K. M., Bhat, Shreesha, Dharmaprakash, S. M.
• Format: Conference Proceeding
• Language: English
• Subjects: ALUMINIUM ADDITIONS; Carrier density; CARRIERS; Coating effects; CONCENTRATION RATIO; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DOPED MATERIALS; ELECTRICAL PROPERTIES; Electrical resistivity; GALLIUM ADDITIONS; GLASS; Glass substrates; GRAIN SIZE; MOBILITY; OPACITY; POLYCRYSTALS; SOL-GEL PROCESS; Sol-gel processes; SPIN; Spin coating; SPIN-ON COATING; SUBSTRATES; TEXTURE; THIN FILMS; Transmittance; VISIBLE RADIATION; X-RAY DIFFRACTION; Zinc oxide; ZINC OXIDES
• ISSN: 0094-243X; 1551-7616
• DOI: 10.1063/1.4947925

Transparent conducting ZnO doped with Al, Ga and co-doped Al and Ga (1:1) (AGZO) thin films were grown on glass substrates by cost effective sol-gel spin coating method. The XRD results showed that all the films are polycrystalline in nature and highly textured along the (002) plane. Enhanced grain size was observed in the case of AGZO thin films. The transmittance of all the films was more than 83% in the visible region of light. The electrical properties such as carrier concentration and mobility values are increased in case of AGZO compared to that of Al and Ga doped ZnO thin films. The minimum resistivity of 2.54 × 10−3 Ω cm was observed in AGZO thin film. The co-doped AGZO thin films exhibited minimum resistivity and high optical transmittance, indicate that co-doped ZnO thin films could be used in transparent electronics mainly in display applications.