Growth and characterization of AgGa0.5In0.5Se2 single crystals by modified vertical Bridgman method

AgGa0.5In0.5Se2 single crystal was grown using a double wall quartz ampoule with accelerated crucible rotation technique by modified vertical Bridgman method. The structural perfection was measured using HRXRD. The grown single crystal composition was measured using ICP-OES analysis and compositiona...

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Bibliographic Details
Main Authors: Vijayakumar, P., Ramasamy, P.
Format: Conference Proceeding
Language:English
Subjects:
Bridgman method
Crucibles
Crystal growth
Crystal structure
Photoconductivity
Raman spectroscopy
Single crystals
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Summary:AgGa0.5In0.5Se2 single crystal was grown using a double wall quartz ampoule with accelerated crucible rotation technique by modified vertical Bridgman method. The structural perfection was measured using HRXRD. The grown single crystal composition was measured using ICP-OES analysis and compositional uniformities were measured using Raman spectroscopy analysis. Photoconductivity measurements confirm the positive photoconducting nature.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4948020