Temperature-dependent dielectric and energy-storage properties of Pb(Zr,Sn,Ti)O3 antiferroelectric bulk ceramics

The dielectric and energy-storage properties of Pb0.99Nb0.02[(Zr0.60Sn0.40)0.95Ti0.05]0.98O3 (PNZST) bulk ceramics near the antiferroelectric (AFE)-ferroelectric (FE) phase boundary are investigated as a function of temperature. Three characteristic temperatures T 0, T C, T 2 are obtained from the d...

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Bibliographic Details
Published in:AIP advances 2016-05, Vol.6 (5), p.055203-055203-6
Main Authors: Chen, Xuefeng, Liu, Zhen, Xu, Chenhong, Cao, Fei, Wang, Genshui, Dong, Xianlin
Format: Article
Language:English
Subjects:
Antiferroelectricity
Ceramics
Dielectric properties
Electronic devices
Energy storage
Ferroelectric materials
Flux density
Hysteresis loops
Lead
Temperature
Temperature dependence
Tin
Zirconium
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Summary:The dielectric and energy-storage properties of Pb0.99Nb0.02[(Zr0.60Sn0.40)0.95Ti0.05]0.98O3 (PNZST) bulk ceramics near the antiferroelectric (AFE)-ferroelectric (FE) phase boundary are investigated as a function of temperature. Three characteristic temperatures T 0, T C, T 2 are obtained from the dielectric temperature spectrum. At different temperature regions (below T 0, between T 0 and T C, and above T C), three types of hysteresis loops are observed as square double loop, slim loop and linear loop, respectively. The switching fields and recoverable energy density all first increase and then decrease with increasing temperature, and reach their peak values at ∼T 0. These results provide a convenient method to optimize the working temperature of antiferroelectric electronic devices through testing the temperature dependent dielectric properties of antiferroelectric ceramics.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4948915