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Ultraviolet micro-Raman spectroscopy stress mapping of a 75-mm GaN-on-diamond wafer
Full-wafer stress mapping is accomplished using visible and ultraviolet (UV) micro-Raman spectroscopy of a 730-nm thick GaN layer integrated with diamond grown by chemical vapor deposition. The UV measurements taken from both sides of the wafer reveal a higher tensile stress of 0.86 ± 0.07 GPa at th...
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| Published in: | Applied physics letters 2016-05, Vol.108 (21) |
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| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c428t-e36ce2d05aa67f37054fc1e92e3ee51f3240ada5b9b31e7de75e1f334b41d9953 |
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| cites | cdi_FETCH-LOGICAL-c428t-e36ce2d05aa67f37054fc1e92e3ee51f3240ada5b9b31e7de75e1f334b41d9953 |
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| container_issue | 21 |
| container_start_page | |
| container_title | Applied physics letters |
| container_volume | 108 |
| creator | Hancock, B. L. Nazari, M. Anderson, J. Piner, E. Faili, F. Oh, S. Twitchen, D. Graham, S. Holtz, M. |
| description | Full-wafer stress mapping is accomplished using visible and ultraviolet (UV) micro-Raman spectroscopy of a 730-nm thick GaN layer integrated with diamond grown by chemical vapor deposition. The UV measurements taken from both sides of the wafer reveal a higher tensile stress of 0.86
±
0.07 GPa at the free GaN surface compared to 0.23
±
0.06 GPa from the GaN/diamond interface, each with good cross-wafer uniformity. Factors influencing the overall stress and stress gradient are understood based on relaxation from dislocations in the GaN which vary in density along the growth direction. Simulations incorporating a model for stress relaxation in the GaN elastic modulus adequately describe the observed dependence. |
| doi_str_mv | 10.1063/1.4952596 |
| format | article |
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±
0.07 GPa at the free GaN surface compared to 0.23
±
0.06 GPa from the GaN/diamond interface, each with good cross-wafer uniformity. Factors influencing the overall stress and stress gradient are understood based on relaxation from dislocations in the GaN which vary in density along the growth direction. Simulations incorporating a model for stress relaxation in the GaN elastic modulus adequately describe the observed dependence.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4952596</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Chemical vapor deposition ; Computer simulation ; Dependence ; Diamonds ; Dislocation density ; Mapping ; Modulus of elasticity ; Organic chemistry ; Raman spectroscopy ; Spectrum analysis ; Stress relaxation ; Tensile stress ; Ultraviolet spectroscopy</subject><ispartof>Applied physics letters, 2016-05, Vol.108 (21)</ispartof><rights>Author(s)</rights><rights>2016 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c428t-e36ce2d05aa67f37054fc1e92e3ee51f3240ada5b9b31e7de75e1f334b41d9953</citedby><cites>FETCH-LOGICAL-c428t-e36ce2d05aa67f37054fc1e92e3ee51f3240ada5b9b31e7de75e1f334b41d9953</cites><orcidid>0000-0003-2950-3181 ; 0000-0001-9524-964X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.4952596$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,782,784,795,27924,27925,76383</link.rule.ids></links><search><creatorcontrib>Hancock, B. L.</creatorcontrib><creatorcontrib>Nazari, M.</creatorcontrib><creatorcontrib>Anderson, J.</creatorcontrib><creatorcontrib>Piner, E.</creatorcontrib><creatorcontrib>Faili, F.</creatorcontrib><creatorcontrib>Oh, S.</creatorcontrib><creatorcontrib>Twitchen, D.</creatorcontrib><creatorcontrib>Graham, S.</creatorcontrib><creatorcontrib>Holtz, M.</creatorcontrib><title>Ultraviolet micro-Raman spectroscopy stress mapping of a 75-mm GaN-on-diamond wafer</title><title>Applied physics letters</title><description>Full-wafer stress mapping is accomplished using visible and ultraviolet (UV) micro-Raman spectroscopy of a 730-nm thick GaN layer integrated with diamond grown by chemical vapor deposition. The UV measurements taken from both sides of the wafer reveal a higher tensile stress of 0.86
±
0.07 GPa at the free GaN surface compared to 0.23
±
0.06 GPa from the GaN/diamond interface, each with good cross-wafer uniformity. Factors influencing the overall stress and stress gradient are understood based on relaxation from dislocations in the GaN which vary in density along the growth direction. Simulations incorporating a model for stress relaxation in the GaN elastic modulus adequately describe the observed dependence.</description><subject>Applied physics</subject><subject>Chemical vapor deposition</subject><subject>Computer simulation</subject><subject>Dependence</subject><subject>Diamonds</subject><subject>Dislocation density</subject><subject>Mapping</subject><subject>Modulus of elasticity</subject><subject>Organic chemistry</subject><subject>Raman spectroscopy</subject><subject>Spectrum analysis</subject><subject>Stress relaxation</subject><subject>Tensile stress</subject><subject>Ultraviolet spectroscopy</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqd0E1LAzEQBuAgCtbqwX8Q8KSQmo_NbnOUolUoCmrPYbqZyJbuZk3SSv-9KxW8expmeJhhXkIuBZ8IXqpbMSmMltqUR2QkeFUxJcT0mIw454qVRotTcpbSemi1VGpE3pabHGHXhA1m2jZ1DOwVWuho6rHOMaQ69HuacsSUaAt933QfNHgKtNKsbekcnlnomGugDZ2jX-AxnpMTD5uEF791TJYP9--zR7Z4mT_N7hasLuQ0M1RljdJxDVBWXlVcF74WaCQqRC28kgUHB3plVkpg5bDSOExVsSqEM0arMbk67O1j-NxiynYdtrEbTloppJhybbgZ1PVBDb-lFNHbPjYtxL0V3P5kZoX9zWywNweb6iZDbkL3P7wL8Q_a3nn1Da8Qed4</recordid><startdate>20160523</startdate><enddate>20160523</enddate><creator>Hancock, B. L.</creator><creator>Nazari, M.</creator><creator>Anderson, J.</creator><creator>Piner, E.</creator><creator>Faili, F.</creator><creator>Oh, S.</creator><creator>Twitchen, D.</creator><creator>Graham, S.</creator><creator>Holtz, M.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-2950-3181</orcidid><orcidid>https://orcid.org/0000-0001-9524-964X</orcidid></search><sort><creationdate>20160523</creationdate><title>Ultraviolet micro-Raman spectroscopy stress mapping of a 75-mm GaN-on-diamond wafer</title><author>Hancock, B. L. ; Nazari, M. ; Anderson, J. ; Piner, E. ; Faili, F. ; Oh, S. ; Twitchen, D. ; Graham, S. ; Holtz, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c428t-e36ce2d05aa67f37054fc1e92e3ee51f3240ada5b9b31e7de75e1f334b41d9953</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Applied physics</topic><topic>Chemical vapor deposition</topic><topic>Computer simulation</topic><topic>Dependence</topic><topic>Diamonds</topic><topic>Dislocation density</topic><topic>Mapping</topic><topic>Modulus of elasticity</topic><topic>Organic chemistry</topic><topic>Raman spectroscopy</topic><topic>Spectrum analysis</topic><topic>Stress relaxation</topic><topic>Tensile stress</topic><topic>Ultraviolet spectroscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hancock, B. L.</creatorcontrib><creatorcontrib>Nazari, M.</creatorcontrib><creatorcontrib>Anderson, J.</creatorcontrib><creatorcontrib>Piner, E.</creatorcontrib><creatorcontrib>Faili, F.</creatorcontrib><creatorcontrib>Oh, S.</creatorcontrib><creatorcontrib>Twitchen, D.</creatorcontrib><creatorcontrib>Graham, S.</creatorcontrib><creatorcontrib>Holtz, M.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hancock, B. L.</au><au>Nazari, M.</au><au>Anderson, J.</au><au>Piner, E.</au><au>Faili, F.</au><au>Oh, S.</au><au>Twitchen, D.</au><au>Graham, S.</au><au>Holtz, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ultraviolet micro-Raman spectroscopy stress mapping of a 75-mm GaN-on-diamond wafer</atitle><jtitle>Applied physics letters</jtitle><date>2016-05-23</date><risdate>2016</risdate><volume>108</volume><issue>21</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Full-wafer stress mapping is accomplished using visible and ultraviolet (UV) micro-Raman spectroscopy of a 730-nm thick GaN layer integrated with diamond grown by chemical vapor deposition. The UV measurements taken from both sides of the wafer reveal a higher tensile stress of 0.86
±
0.07 GPa at the free GaN surface compared to 0.23
±
0.06 GPa from the GaN/diamond interface, each with good cross-wafer uniformity. Factors influencing the overall stress and stress gradient are understood based on relaxation from dislocations in the GaN which vary in density along the growth direction. Simulations incorporating a model for stress relaxation in the GaN elastic modulus adequately describe the observed dependence.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4952596</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0003-2950-3181</orcidid><orcidid>https://orcid.org/0000-0001-9524-964X</orcidid><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2016-05, Vol.108 (21) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_scitation_primary_10_1063_1_4952596 |
| source | American Institute of Physics (AIP) Publications; American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
| subjects | Applied physics Chemical vapor deposition Computer simulation Dependence Diamonds Dislocation density Mapping Modulus of elasticity Organic chemistry Raman spectroscopy Spectrum analysis Stress relaxation Tensile stress Ultraviolet spectroscopy |
| title | Ultraviolet micro-Raman spectroscopy stress mapping of a 75-mm GaN-on-diamond wafer |
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