Fourier-transform-based model for carrier transport in semiconductor heterostructures: Longitudinal optical phonon scattering

We present scattering rates for electrons at longitudinal optical phonons within a model completely formulated in the Fourier domain. The total intersubband scattering rates are obtained by averaging over the intrasubband electron distributions. The rates consist of the Fourier components of the ele...

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Bibliographic Details
Published in:Journal of applied physics 2016-06, Vol.119 (21)
Main Authors: Lü, X., Schrottke, L., Grahn, H. T.
Format: Article
Language:English
Subjects:
ACCURACY
Applied physics
CALCULATION METHODS
CARRIER DENSITY
Carrier transport
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DISTRIBUTION
ELECTRONS
ENERGY DEPENDENCE
FOURIER TRANSFORMATION
Fourier transforms
Heterostructures
PHONONS
Rational functions
SCATTERING
SEMICONDUCTOR MATERIALS
TRANSPORT THEORY
WAVE FUNCTIONS
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Summary:We present scattering rates for electrons at longitudinal optical phonons within a model completely formulated in the Fourier domain. The total intersubband scattering rates are obtained by averaging over the intrasubband electron distributions. The rates consist of the Fourier components of the electron wave functions and a contribution depending only on the intersubband energies and the intrasubband carrier distributions. The energy-dependent part can be reproduced by a rational function, which allows for the separation of the scattering rates into a dipole-like contribution, an overlap-like contribution, and a contribution which can be neglected for low and intermediate carrier densities of the initial subband. For a balance between accuracy and computation time, the number of Fourier components can be adjusted. This approach facilitates an efficient design of complex heterostructures with realistic, temperature- and carrier density-dependent rates.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4952741