Low-energy phase change memory with graphene confined layer

How to reduce the Reset operation energy is the key scientific and technological problem in the field of phase change memory (PCM). Here, we show in the Ge2Sb2Te5 based PCM cell, inserting an additional graphene monolayer in the Ge2Sb2Te5 layer can remarkably decrease both the Reset current and ener...

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Bibliographic Details
Published in:Applied physics letters 2016-06, Vol.108 (25)
Main Authors: Zhu, Chengqiu, Ma, Jun, Ge, Xiaoming, Rao, Feng, Ding, Keyuan, Lv, Shilong, Wu, Liangcai, Song, Zhitang
Format: Article
Language:English
Subjects:
Applied physics
Computer memory
Graphene
Monolayers
Phase change
Phase transitions
Power consumption
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Summary:How to reduce the Reset operation energy is the key scientific and technological problem in the field of phase change memory (PCM). Here, we show in the Ge2Sb2Te5 based PCM cell, inserting an additional graphene monolayer in the Ge2Sb2Te5 layer can remarkably decrease both the Reset current and energy. Because of the small out-of-plane electrical and thermal conductivities of such monolayer graphene, the Set resistance and the heat dissipation towards top TiN electrode of the modified PCM cell are significantly increased and decreased, respectively. The mushroom-typed larger active phase transition volume thus can be confined inside the underlying thinner GST layer, resulting in the lower power consumption.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4953769