Fermi-level unpinning in Pt/Al2O3/GaSb PMOS capacitors by sulphurization and rapid thermal annealing of GaSb surfaces

A facile route to mitigate the Fermi-level pinning between a p-type GaSb semiconductor and an Al2O3 dielectric is proposed. Combination of the sulphurization of the GaSb surface and the subsequent rapid thermal annealing allowed for high quality GaSb/Al2O3 interfacial characteristics; the interfacia...

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Bibliographic Details
Published in:Applied physics letters 2016-08, Vol.109 (7)
Main Authors: Kim, Seongkyung, Yoo, Sijung, Lim, Hajin, Kim, Joon-Rae, Jeong, Jae Kyeong, Kim, Hyeong Joon
Format: Article
Language:English
Subjects:
Aluminum oxide
Annealing
Applied physics
Capacitors
Gallium antimonides
Gallium oxides
Organic chemistry
P-type semiconductors
Radioactivity
Sulfurization
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Summary:A facile route to mitigate the Fermi-level pinning between a p-type GaSb semiconductor and an Al2O3 dielectric is proposed. Combination of the sulphurization of the GaSb surface and the subsequent rapid thermal annealing allowed for high quality GaSb/Al2O3 interfacial characteristics; the interfacial trap density value was ≤2.0 × 1012 cm−2 eV−1 in an energy range of 0.05 ≤ ET − Ev ≤ 0.45 eV for the PMOS capacitor via rapid thermal annealing at 575 °C. A physical rationale was given on the basis of the thermo-chemical conversion of Ga2O into Ga2O3 and the conformal elimination of Sb related elements and oxides on the GaSb surface.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4961492