Hierarchically constrained carrier dynamics in red-LED illuminated type-II InAs/GaSb superlattices

We report on positive and negative persistent photo-effects observed in some red light emitting diode (LED)-illuminated type-II InAs/GaSb superlattices (SLs) grown on a p-type GaSb. By analyzing the time dependence of the transverse resistance during and after the illumination, we show that the rise...

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Bibliographic Details
Published in:Journal of applied physics 2016-10, Vol.120 (14)
Main Authors: Szmulowicz, F., Elhamri, S., Haugan, H. J., Mitchel, W. C.
Format: Article
Language:English
Subjects:
Applied physics
Buffer layers
Carrier density
Diagnostic systems
Diffusion effects
Diffusion layers
Indium arsenides
Light emitting diodes
Superlattices
Time dependence
Trapping
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Summary:We report on positive and negative persistent photo-effects observed in some red light emitting diode (LED)-illuminated type-II InAs/GaSb superlattices (SLs) grown on a p-type GaSb. By analyzing the time dependence of the transverse resistance during and after the illumination, we show that the rise and decay curves are logarithmic, a behavior which points to hierarchically constrained carrier dynamics. Accordingly, negative persistent effects are explained by diffusion and trapping of photo-excited carriers in the p-type buffer layer and their subsequent tunneling back to the SL. On the other hand, positive persistent effects are explained by a low density of majority-carrier trapping centers in the buffer layer. Hence, persistent photo-effects upon red-LED irradiation provide a diagnostic of the quality of the superlattice-buffer interface.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4964412