Multicarrier transport in InGaSb/InAs superlattice structures

The electrical properties of In0.25Ga0.75Sb/InAs superlattices designed for use as very long wavelength infrared detectors were studied with magnetic field dependent transport measurements and multicarrier analysis. Two electron channels and one hole channel were identified. The low concentration, h...

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Bibliographic Details
Published in:Journal of applied physics 2016-11, Vol.120 (17)
Main Authors: Mitchel, W. C., Elhamri, Said, Haugan, H. J., Brown, Gail J., Mou, Shin, Szmulowicz, Frank
Format: Article
Language:English
Subjects:
Applied physics
Carrier density
Channels
Electrical properties
Electrons
Infrared detectors
Magnetic fields
Superlattices
Transport
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Summary:The electrical properties of In0.25Ga0.75Sb/InAs superlattices designed for use as very long wavelength infrared detectors were studied with magnetic field dependent transport measurements and multicarrier analysis. Two electron channels and one hole channel were identified. The low concentration, high mobility electron channel was identified with conduction within the superlattice. Residual electron concentrations in the superlattice are found to be in the high 1010 cm-2 range with mobilities on the order of 40 000 cm2/V s. The other electron and hole channels have significantly lower mobilities with concentrations in the 1011 cm-2 range and can have a significant impact on the resistivity, carrier concentration, and mobility as measured at a single magnetic field value in conventional transport measurements.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4966136