Fast switching and low power of superlattice-like SnSe2/Sb thin films for phase change memory application

Two non-promising phase change materials (SnSe2 and Sb) were prepared through the superlattice-like (SLL) method to explore the suitable phase change layer for phase change memory (PCM) application. The crystallization temperature, activation energy, and 10-year data retention of the SLL [SnSe2(10 n...

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Bibliographic Details
Published in:Journal of applied physics 2016-10, Vol.120 (16)
Main Authors: Wu, Weihua, He, Zifang, Chen, Shiyu, Zhai, Jiwei, Liu, Xinyi, Lai, Tianshu, Song, Sannian, Song, Zhitang
Format: Article
Language:English
Subjects:
Applied physics
Computer memory
Crystallization
Phase change materials
Phase transitions
Power consumption
Superlattices
Thermal energy
Thin films
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Summary:Two non-promising phase change materials (SnSe2 and Sb) were prepared through the superlattice-like (SLL) method to explore the suitable phase change layer for phase change memory (PCM) application. The crystallization temperature, activation energy, and 10-year data retention of the SLL [SnSe2(10 nm)/Sb(2 nm)]4 ([SS(10)/S(2)]4) thin film are 185 °C, 3.03 eV, and 116 °C, respectively. The volume change of the SLL [SS(10)/S(2)]4 thin film during the crystallization is as small as 3.5%. The phase transition speed of the SLL [SS(10)/S(2)]4 thin film for crystallization is only about 11.9 ns. PCM cell based on the SLL [SS(10)/S(2)]4 thin film shows high operation speed (20 ns for SET/RESET) and lower power consumption (2.75 × 10−11 J for RESET operation).
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4966594