Strategies for tuning a linear quadruple quantum dot array to the few electron regime

The tunability of a versatile gate-defined lateral quadruple quantum dot array in a GaAs/AlGaAs heterostructure was investigated. Two strategies were evaluated for systematically tuning the device into the few-electron regime. The outcome of one approach was found to be prone to meta-stability of th...

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Bibliographic Details
Published in:Applied physics letters 2016-10, Vol.109 (17)
Main Authors: Bogan, Alex, Bergeron, Laurent, Kam, Alicia, Zawadzki, Piotr, Studenikin, Sergei, Gaudreau, Louis, Sachrajda, Andrew
Format: Article
Language:English
Subjects:
Applied physics
Arrays
Electrons
Gallium arsenide
Heterostructures
Quantum dots
Stability
Tuning
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Summary:The tunability of a versatile gate-defined lateral quadruple quantum dot array in a GaAs/AlGaAs heterostructure was investigated. Two strategies were evaluated for systematically tuning the device into the few-electron regime. The outcome of one approach was found to be prone to meta-stability of the charge state of the array, specifically related to the occupancy of quantum dots that were not directly connected to the leads. The mechanism behind this meta-stability is discussed. An alternative approach provides a more efficient method of tuning the device into the few-electron regime while avoiding the meta-stability complication.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4966618