Symmetry and diffusivity of the interstitial hydrogen shallow-donor center in In2O3

Uniaxial-stress experiments performed for the 3306 cm−1 vibrational line assigned to the interstitial-hydrogen, shallow-donor center in In2O3 reveal its symmetry and transition-moment direction. The defect alignment that can be produced by a [001] stress applied at 165 K is due to a process that is...

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Bibliographic Details
Published in:Applied physics letters 2016-11, Vol.109 (20)
Main Authors: Weiser, Philip, Qin, Ying, Yin, Weikai, Stavola, Michael, Fowler, W. Beall, Boatner, Lynn A.
Format: Article
Language:English
Subjects:
absorption spectra
activation energies
Applied physics
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
conducting oxide
Diffusion
Hydrogen
In2O3 doped with Sn
Indium oxides
infrared spectra
interstitial defects
light-emitting diodes
Symmetry
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Summary:Uniaxial-stress experiments performed for the 3306 cm−1 vibrational line assigned to the interstitial-hydrogen, shallow-donor center in In2O3 reveal its symmetry and transition-moment direction. The defect alignment that can be produced by a [001] stress applied at 165 K is due to a process that is also a hydrogen-diffusion jump, providing a microscopic determination of the diffusion constant for H in In2O3 and its mechanism. Our experimental results strongly complement the theoretical predictions for the structure and diffusion of the interstitial hydrogen donor center in In2O3.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4967943