Effect of growth temperature on structural and electronic properties of ZnO thin films

The electronic and structural properties for RF magnetron sputtering deposited ZnO thin films grown on Si substrate was obtained by using X-ray diffraction (XRD) and reflection electron energy loss spectroscopy (REELS). XRD spectra show the intensity of the diffraction peak increases with increasing...

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Bibliographic Details
Main Authors: Tahir, Dahlang, Jae, Kang Hee
Format: Conference Proceeding
Language:English
Subjects:
Electron energy loss spectroscopy
Electronic properties
Energy dissipation
Magnetic properties
Magnetron sputtering
Reels
Silicon substrates
Spectrum analysis
Thin films
X ray reflection
X ray spectra
X-ray diffraction
Zinc oxide
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Summary:The electronic and structural properties for RF magnetron sputtering deposited ZnO thin films grown on Si substrate was obtained by using X-ray diffraction (XRD) and reflection electron energy loss spectroscopy (REELS). XRD spectra show the intensity of the diffraction peak increases with increasing the growth temperature with (002) is strongest diffraction peak. The particle sizes for (002) are increase from 10.2 nm to 60.2 nm with increasing growth temperature from room temperature to 500oC, respectively. The band gap of ZnO thin films REELS spectra are 3.1±0.1 eV. The dominant peak from REELS at about 18 eV is ascribed to a bulk Plasmon excitation, which represents the collective oscillation of the valence electrons excited by the incident fast electrons.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4973085