Effects of growth conditions on the quality of B-doped graphene films

Boron-doped graphene (B-doped graphene) films with large area, high quality, and good uniformity are successfully prepared by chemical vapor deposition using ethylboronic acid (C2H7BO2) as the sole precursor. The pre-treatment of the copper foil and post-annealing are introduced to the growth proces...

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Bibliographic Details
Published in:Journal of applied physics 2017-01, Vol.121 (2)
Main Authors: You, Y., Wang, C., Xu, Y. L., Wan, J. X., Ren, W., Fang, X. H., Chen, X. Y.
Format: Article
Language:English
Subjects:
Applied physics
Boron
Carrier density
Chemical vapor deposition
Foils
Graphene
Organic chemistry
Pretreatment
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Summary:Boron-doped graphene (B-doped graphene) films with large area, high quality, and good uniformity are successfully prepared by chemical vapor deposition using ethylboronic acid (C2H7BO2) as the sole precursor. The pre-treatment of the copper foil and post-annealing are introduced to the growth process and proved to be greatly influential to the quality of B-doped graphene. The films prepared are mainly monolayer with the transmittance of about 97.1%, the B/C ratio of about 2.3%, the sheet resistance of 1.5–3 kΩ/◻, and the carrier density of 1.13 × 1013 cm−2 at room temperature.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4974010