A facile synthesis of CH3NH3PbBr3 perovskite quantum dots and their application in flexible nonvolatile memory

In this work, we present a simple and facile one step synthesis strategy to prepare CH3NH3PbBr3 perovskite quantum dots and apply them into the nonvolatile memory. Resistive switching phenomenon was observed in this perovskite quantum dots and polymer composite based memory device with the ON/OFF cu...

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Bibliographic Details
Published in:Applied physics letters 2017-02, Vol.110 (8)
Main Authors: Yang, Kaiyu, Li, Fushan, Veeramalai, Chandrasekar Perumal, Guo, Tailiang
Format: Article
Language:English
Subjects:
Applied physics
Memory devices
Perovskites
Polymer matrix composites
Quantum dots
Random access memory
Reproducibility
Switching
Synthesis
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Summary:In this work, we present a simple and facile one step synthesis strategy to prepare CH3NH3PbBr3 perovskite quantum dots and apply them into the nonvolatile memory. Resistive switching phenomenon was observed in this perovskite quantum dots and polymer composite based memory device with the ON/OFF current ratio larger than 103 as well as good reproducibility and reliability. Flexible memory was also demonstrated, and a possible resistance switching mechanism was discussed. Our work paves a way for the application of organolead halide perovskite quantum dots in flexible and transparent nonvolatile memories.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4976709