Temperature dependent dielectric behavior of sol–gel grown Y0.95Ca0.05MnO3/Si junction

• Main Authors: Dhruv, Davit, Joshi, Zalak, Solanki, Sapana, Sagapariya, Khushal, Makwana, Pratima, Kansara, S. B., Joshi, A. D., Pandya, D. D., Solanki, P. S., Shah, N. A.
• Format: Conference Proceeding
• Language: English
• ISSN: 0094-243X; 1551-7616
• DOI: 10.1063/1.4982140

We have successfully fabricated divalent doped Y0.95Ca0.05MnO3 film on (100) single crystalline n-type Si substrate by spin coating assisted chemical solution deposition technique. The X–ray diffraction (XRD) pattern of thin film depicts that the film has (h00) directional growth on substrate. Thin film possesses –1.4% compressive strain at the interface level and thin film thickness is found to be ∼ 78nm. Dielectric property of film has been studied by Agilent LCR meter from 100Hz to 2MHz applied field frequency at temperatures 150 to 300K. Real dielectric permittivity decreases and imaginary dielectric permittivity increases with increasing applied frequency. Furthermore, at low temperatures, higher dielectric is observed in all the frequency range studied and it decreases with increasing temperature due to thermal excitation induced increased charge carrier movements across the film lattice. The relaxation mechanism of Y0.95Ca0.05MnO3 film has been understood through cole–cole plots.