Structural analysis of a phosphide-based epitaxial structure with a buried oxidized AlAs sacrificial layer

Phosphide-based thin-film light-emitting diodes (TF-LEDs) lattice-matched to GaAs are well established in optoelectronics in the wavelength range between 550 and 650 nm. In this work, we investigate the impact of oxidized AlAs to overlying phosphide-based pseudomorphically grown epitaxial structures...

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Bibliographic Details
Published in:Journal of applied physics 2017-06, Vol.121 (21)
Main Authors: Englhard, M., Reuters, B., Baur, J., Klemp, C., Zaumseil, P., Schroeder, T., Skibitzki, O.
Format: Article
Language:English
Subjects:
Aluminum gallium indium phosphides
Applied physics
Buried structures
Compressive properties
Diodes
Energy dispersive X ray spectroscopy
Energy transmission
Epitaxial growth
Gallium arsenide
Lattice matching
Light emission
Optoelectronics
Organic light emitting diodes
Oxidation
Photoluminescence
Plane strain
Quantum wells
Scanning electron microscopy
Scanning transmission electron microscopy
Structural analysis
Substrates
Thin films
Transmission electron microscopy
X-ray diffraction
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Summary:Phosphide-based thin-film light-emitting diodes (TF-LEDs) lattice-matched to GaAs are well established in optoelectronics in the wavelength range between 550 and 650 nm. In this work, we investigate the impact of oxidized AlAs to overlying phosphide-based pseudomorphically grown epitaxial structures. Oxidation of a buried AlAs sacrificial layer allows the separation of the grown TF-LED epitaxy from its substrates and enables an oxidation lift-off process. To evaluate the strain effect of progressing oxidation on the structure of the chip, we perform high-resolution x-ray diffraction analysis on as-grown, mesa-structured, semi-oxidized, and completely laterally oxidized chips. At each state, a pseudomorphic phosphide-based InAlP layer is found. The InAlP layer exhibits a tensile out-of-plane strain of approximately 0.20% and a compressive in-plane strain of approx. −0.19%. Additionally, scanning transmission electron microscopy, energy-dispersive x-ray spectroscopy, and μ-photoluminescence were used for investigation of the boundary zone of the oxidation front of AlAs, the interfaces between phosphide-based semiconductors (InAlP/InGaAlP) and oxidized amorphous AlAs and the light emission of InGaAlP multiple quantum wells.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4984056