Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts

We present a comprehensive study on the formation and tuning of the Schottky barrier of NiGeSn metallic alloys on Ge1-xSnx semiconductors. First, the Ni metallization of GeSn is investigated for a wide range of Sn contents (x = 0–0.125). Structural analysis reveals the existence of different poly-cr...

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Bibliographic Details
Published in:Journal of applied physics 2017-05, Vol.121 (20)
Main Authors: Schulte-Braucks, Christian, Hofmann, Emily, Glass, Stefan, von den Driesch, Nils, Mussler, Gregor, Breuer, Uwe, Hartmann, Jean-Michel, Zaumseil, Peter, Schröder, Thomas, Zhao, Qing-Tai, Mantl, Siegfried, Buca, Dan
Format: Article
Language:English
Subjects:
Applied physics
Barriers
Dependence
Dopants
Electric contacts
Electrical measurement
Metallizing
Nickel
Schottky diodes
Secondary ion mass spectroscopy
Structural analysis
Tin
Tuning
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Summary:We present a comprehensive study on the formation and tuning of the Schottky barrier of NiGeSn metallic alloys on Ge1-xSnx semiconductors. First, the Ni metallization of GeSn is investigated for a wide range of Sn contents (x = 0–0.125). Structural analysis reveals the existence of different poly-crystalline NiGeSn and Ni3(GeSn)5 phases depending on the Sn content. Electrical measurements confirm a low NiGeSn sheet resistance of 12 Ω/□ almost independent of the Sn content. We extracted from Schottky barrier height measurements in NiGeSn/GeSn/NiGeSn metal-semiconductor-metal diodes Schottky barriers for the holes below 0.15 eV. They decrease with the Sn content, thereby confirming NiGeSn as an ideal metal alloy for p-type contacts. Dopant segregation for both p- and n-type dopants is investigated as a technique to effectively modify the Schottky barrier of NiGeSn/GeSn contacts. Secondary ion mass spectroscopy is employed to analyze dopant segregation and reveal its dependence on both the Sn content and biaxial layer strain.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4984117