Uniform large-area growth of nanotemplated high-quality monolayer MoS2

• Published in: Applied physics letters 2017-06, Vol.110 (26)
• Main Authors: Young, Justin R., Chilcote, Michael, Barone, Matthew, Xu, Jinsong, Katoch, Jyoti, Luo, Yunqiu Kelly, Mueller, Sara, Asel, Thaddeus J., Fullerton-Shirey, Susan K., Kawakami, Roland, Gupta, Jay A., Brillson, Leonard J., Johnston-Halperin, Ezekiel
• Format: Article
• Language: English
• Subjects: Applied physics; Atomic force microscopy; Electron transport; Heterostructures; Material properties; Molybdenum disulfide; Photoluminescence; Sapphire; Sensitivity enhancement; Substrates; Thickness
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.4989851

Over the past decade, it has become apparent that the extreme sensitivity of 2D crystals to surface interactions presents a unique opportunity to tune material properties through surface functionalization and the mechanical assembly of 2D heterostructures. However, this opportunity carries with it a concurrent challenge: an enhanced sensitivity to surface contamination introduced by standard patterning techniques that is exacerbated by the difficulty in cleaning these atomically thin materials. Here, we report a templated MoS2 growth technique wherein Mo is deposited onto atomically stepped sapphire substrates through a SiN stencil with feature sizes down to 100 nm and subsequently sulfurized at high temperature. These films have a quality comparable to the best MoS2 prepared by other methodologies, and the thickness of the resulting MoS2 patterns can be tuned layer-by-layer by controlling the initial Mo deposition. The quality and thickness of the films are confirmed by scanning electron, scanning tunneling, and atomic force microscopies; Raman, photoluminescence, and x-ray photoelectron spectroscopies; and electron transport measurements. This approach critically enables the creation of patterned, single-layer MoS2 films with pristine surfaces suitable for subsequent modification via functionalization and mechanical stacking. Further, we anticipate that this growth technique should be broadly applicable within the family of transition metal dichalcogenides.