Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy

• Published in: AIP advances 2017-07, Vol.7 (7), p.075117-075117-10
• Main Authors: Ma, Y. J., Zhang, Y. G., Gu, Y., Xi, S. P., Chen, X. Y., Liang, Baolai, Juang, Bor-Chau, Huffaker, Diana L., Du, B., Shao, X. M., Fang, J. X.
• Format: Article
• Language: English
• Subjects: Beryllium; Compensation; Coordination compounds; Doping; Epitaxial growth; Gallium indium arsenide phosphide; Lattice matching; Minority carriers; Molecular beam epitaxy; Optical properties; Photoluminescence; Secondary ion mass spectroscopy
• ISSN: 2158-3226; 2158-3226
• DOI: 10.1063/1.4989884

We report structural properties as well as electrical and optical behaviors of beryllium (Be)-doped InGaAsP lattice-matched to InP grown by gas source molecular beam epitaxy. P type layers present a high degree of compensation on the order of 1018 cm−3, and for Be densities below 9.5 × 1017 cm−3, they are found to be n type. Enhanced incorporation of oxygen during Be doping is observed by secondary ion mass spectroscopy. Be in forms of interstitial donors or donor-like Be-O complexes for cell temperatures below 800°C is proposed to account for such anomalous compensation behaviors. A constant photoluminescence energy of 0.98 eV without any Moss-Burstein shift for Be doping levels up to 1018 cm−3 along with increased emission intensity due to passivation effect of Be is also observed. An increasing number of minority carriers tend to relax via Be defect state-related Shockley-Read-Hall recombination with the increase of Be doping density.