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High performance bimorph piezoelectric MEMS harvester via bulk PZT thick films on thin beryllium-bronze substrate
This letter presents a high performance bimorph piezoelectric MEMS harvester with bulk PZT thick films on both sides of a flexible thin beryllium-bronze substrate via bonding and thinning technologies. The upper and lower PZT layers are thinned down to about 53 μm and 76 μm, respectively, and a comm...
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Published in: | Applied physics letters 2017-07, Vol.111 (1) |
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creator | Yi, Zhiran Yang, Bin Li, Guimiao Liu, Jingquan Chen, Xiang Wang, Xiaolin Yang, Chunsheng |
description | This letter presents a high performance bimorph piezoelectric MEMS harvester with bulk PZT thick films on both sides of a flexible thin beryllium-bronze substrate via bonding and thinning technologies. The upper and lower PZT layers are thinned down to about 53 μm and 76 μm, respectively, and a commercial beryllium bronze with the thickness of about 50 μm is used as the substrate. The effective volume of this device is 30.6 mm3. The harvester with a tungsten proof mass generated the close-circuit peak-to-peak voltage of 53.1 V, the output power of 0.979 mW, and the power density of 31.99 mW/cm3 with the matching load resistance of 360 kΩ at the applied acceleration amplitude of 3.5 g and the applied frequency of 77.2 Hz. Meanwhile, in order to evaluate the stability, the device was measured continuously under applied acceleration amplitudes of 1.0 g and 3.5 g for one hour and demonstrated a good stability. Then, the harvester was utilized to light up LEDs and about twenty-one serial LEDs were lighted up at resonance under an applied acceleration amplitude of 3.0 g. |
doi_str_mv | 10.1063/1.4991368 |
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The upper and lower PZT layers are thinned down to about 53 μm and 76 μm, respectively, and a commercial beryllium bronze with the thickness of about 50 μm is used as the substrate. The effective volume of this device is 30.6 mm3. The harvester with a tungsten proof mass generated the close-circuit peak-to-peak voltage of 53.1 V, the output power of 0.979 mW, and the power density of 31.99 mW/cm3 with the matching load resistance of 360 kΩ at the applied acceleration amplitude of 3.5 g and the applied frequency of 77.2 Hz. Meanwhile, in order to evaluate the stability, the device was measured continuously under applied acceleration amplitudes of 1.0 g and 3.5 g for one hour and demonstrated a good stability. Then, the harvester was utilized to light up LEDs and about twenty-one serial LEDs were lighted up at resonance under an applied acceleration amplitude of 3.0 g.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4991368</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Acceleration ; Amplitudes ; Applied physics ; Beryllium ; Beryllium bronzes ; Lead zirconate titanates ; Light emitting diodes ; Load matching ; Load resistance ; Microelectromechanical systems ; Piezoelectricity ; Stability analysis ; Substrates ; Thick films ; Thin films ; Tungsten</subject><ispartof>Applied physics letters, 2017-07, Vol.111 (1)</ispartof><rights>Author(s)</rights><rights>2017 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c393t-63040c0b7941a91e70dc7479f3c46ea43de90126cdf6f6c6c857bccf3216af713</citedby><cites>FETCH-LOGICAL-c393t-63040c0b7941a91e70dc7479f3c46ea43de90126cdf6f6c6c857bccf3216af713</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.4991368$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,777,779,781,792,27905,27906,76132</link.rule.ids></links><search><creatorcontrib>Yi, Zhiran</creatorcontrib><creatorcontrib>Yang, Bin</creatorcontrib><creatorcontrib>Li, Guimiao</creatorcontrib><creatorcontrib>Liu, Jingquan</creatorcontrib><creatorcontrib>Chen, Xiang</creatorcontrib><creatorcontrib>Wang, Xiaolin</creatorcontrib><creatorcontrib>Yang, Chunsheng</creatorcontrib><title>High performance bimorph piezoelectric MEMS harvester via bulk PZT thick films on thin beryllium-bronze substrate</title><title>Applied physics letters</title><description>This letter presents a high performance bimorph piezoelectric MEMS harvester with bulk PZT thick films on both sides of a flexible thin beryllium-bronze substrate via bonding and thinning technologies. The upper and lower PZT layers are thinned down to about 53 μm and 76 μm, respectively, and a commercial beryllium bronze with the thickness of about 50 μm is used as the substrate. The effective volume of this device is 30.6 mm3. The harvester with a tungsten proof mass generated the close-circuit peak-to-peak voltage of 53.1 V, the output power of 0.979 mW, and the power density of 31.99 mW/cm3 with the matching load resistance of 360 kΩ at the applied acceleration amplitude of 3.5 g and the applied frequency of 77.2 Hz. Meanwhile, in order to evaluate the stability, the device was measured continuously under applied acceleration amplitudes of 1.0 g and 3.5 g for one hour and demonstrated a good stability. Then, the harvester was utilized to light up LEDs and about twenty-one serial LEDs were lighted up at resonance under an applied acceleration amplitude of 3.0 g.</description><subject>Acceleration</subject><subject>Amplitudes</subject><subject>Applied physics</subject><subject>Beryllium</subject><subject>Beryllium bronzes</subject><subject>Lead zirconate titanates</subject><subject>Light emitting diodes</subject><subject>Load matching</subject><subject>Load resistance</subject><subject>Microelectromechanical systems</subject><subject>Piezoelectricity</subject><subject>Stability analysis</subject><subject>Substrates</subject><subject>Thick films</subject><subject>Thin films</subject><subject>Tungsten</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqdkEFLwzAUx4MoOKcHv0HAk0JnXtOmy1GGOmFDwXnxUtI0cdnapkvSwfbp7djAu6fH__Hj_x4_hG6BjIAw-gijhHOgbHyGBkCyLKIA43M0IITQiPEULtGV96s-pjGlA7SZmp8lbpXT1tWikQoXprau7XdG7a2qlAzOSDx_nn_ipXBb5YNyeGsELrpqjT--FzgsjVxjbaraY9scYoML5XZVZbo6Kpxt9gr7rvDBiaCu0YUWlVc3pzlEXy_Pi8k0mr2_vk2eZpGknIaIUZIQSYqMJyA4qIyUMksyrqlMmBIJLRUnEDNZaqaZZHKcZoWUmsbAhM6ADtHdsbd1dtP1b-cr27mmP5nHAIzwtDfVU_dHSjrrvVM6b52phdvlQPKD0Rzyk9GefTiyXpoggrHN_-CtdX9g3paa_gK1s4WL</recordid><startdate>20170703</startdate><enddate>20170703</enddate><creator>Yi, Zhiran</creator><creator>Yang, Bin</creator><creator>Li, Guimiao</creator><creator>Liu, Jingquan</creator><creator>Chen, Xiang</creator><creator>Wang, Xiaolin</creator><creator>Yang, Chunsheng</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20170703</creationdate><title>High performance bimorph piezoelectric MEMS harvester via bulk PZT thick films on thin beryllium-bronze substrate</title><author>Yi, Zhiran ; Yang, Bin ; Li, Guimiao ; Liu, Jingquan ; Chen, Xiang ; Wang, Xiaolin ; Yang, Chunsheng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c393t-63040c0b7941a91e70dc7479f3c46ea43de90126cdf6f6c6c857bccf3216af713</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Acceleration</topic><topic>Amplitudes</topic><topic>Applied physics</topic><topic>Beryllium</topic><topic>Beryllium bronzes</topic><topic>Lead zirconate titanates</topic><topic>Light emitting diodes</topic><topic>Load matching</topic><topic>Load resistance</topic><topic>Microelectromechanical systems</topic><topic>Piezoelectricity</topic><topic>Stability analysis</topic><topic>Substrates</topic><topic>Thick films</topic><topic>Thin films</topic><topic>Tungsten</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yi, Zhiran</creatorcontrib><creatorcontrib>Yang, Bin</creatorcontrib><creatorcontrib>Li, Guimiao</creatorcontrib><creatorcontrib>Liu, Jingquan</creatorcontrib><creatorcontrib>Chen, Xiang</creatorcontrib><creatorcontrib>Wang, Xiaolin</creatorcontrib><creatorcontrib>Yang, Chunsheng</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yi, Zhiran</au><au>Yang, Bin</au><au>Li, Guimiao</au><au>Liu, Jingquan</au><au>Chen, Xiang</au><au>Wang, Xiaolin</au><au>Yang, Chunsheng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High performance bimorph piezoelectric MEMS harvester via bulk PZT thick films on thin beryllium-bronze substrate</atitle><jtitle>Applied physics letters</jtitle><date>2017-07-03</date><risdate>2017</risdate><volume>111</volume><issue>1</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>This letter presents a high performance bimorph piezoelectric MEMS harvester with bulk PZT thick films on both sides of a flexible thin beryllium-bronze substrate via bonding and thinning technologies. The upper and lower PZT layers are thinned down to about 53 μm and 76 μm, respectively, and a commercial beryllium bronze with the thickness of about 50 μm is used as the substrate. The effective volume of this device is 30.6 mm3. The harvester with a tungsten proof mass generated the close-circuit peak-to-peak voltage of 53.1 V, the output power of 0.979 mW, and the power density of 31.99 mW/cm3 with the matching load resistance of 360 kΩ at the applied acceleration amplitude of 3.5 g and the applied frequency of 77.2 Hz. Meanwhile, in order to evaluate the stability, the device was measured continuously under applied acceleration amplitudes of 1.0 g and 3.5 g for one hour and demonstrated a good stability. Then, the harvester was utilized to light up LEDs and about twenty-one serial LEDs were lighted up at resonance under an applied acceleration amplitude of 3.0 g.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4991368</doi><tpages>5</tpages></addata></record> |
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subjects | Acceleration Amplitudes Applied physics Beryllium Beryllium bronzes Lead zirconate titanates Light emitting diodes Load matching Load resistance Microelectromechanical systems Piezoelectricity Stability analysis Substrates Thick films Thin films Tungsten |
title | High performance bimorph piezoelectric MEMS harvester via bulk PZT thick films on thin beryllium-bronze substrate |
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