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High performance bimorph piezoelectric MEMS harvester via bulk PZT thick films on thin beryllium-bronze substrate

This letter presents a high performance bimorph piezoelectric MEMS harvester with bulk PZT thick films on both sides of a flexible thin beryllium-bronze substrate via bonding and thinning technologies. The upper and lower PZT layers are thinned down to about 53 μm and 76 μm, respectively, and a comm...

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Published in:Applied physics letters 2017-07, Vol.111 (1)
Main Authors: Yi, Zhiran, Yang, Bin, Li, Guimiao, Liu, Jingquan, Chen, Xiang, Wang, Xiaolin, Yang, Chunsheng
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Language:English
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cited_by cdi_FETCH-LOGICAL-c393t-63040c0b7941a91e70dc7479f3c46ea43de90126cdf6f6c6c857bccf3216af713
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creator Yi, Zhiran
Yang, Bin
Li, Guimiao
Liu, Jingquan
Chen, Xiang
Wang, Xiaolin
Yang, Chunsheng
description This letter presents a high performance bimorph piezoelectric MEMS harvester with bulk PZT thick films on both sides of a flexible thin beryllium-bronze substrate via bonding and thinning technologies. The upper and lower PZT layers are thinned down to about 53 μm and 76 μm, respectively, and a commercial beryllium bronze with the thickness of about 50 μm is used as the substrate. The effective volume of this device is 30.6 mm3. The harvester with a tungsten proof mass generated the close-circuit peak-to-peak voltage of 53.1 V, the output power of 0.979 mW, and the power density of 31.99 mW/cm3 with the matching load resistance of 360 kΩ at the applied acceleration amplitude of 3.5 g and the applied frequency of 77.2 Hz. Meanwhile, in order to evaluate the stability, the device was measured continuously under applied acceleration amplitudes of 1.0 g and 3.5 g for one hour and demonstrated a good stability. Then, the harvester was utilized to light up LEDs and about twenty-one serial LEDs were lighted up at resonance under an applied acceleration amplitude of 3.0 g.
doi_str_mv 10.1063/1.4991368
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The upper and lower PZT layers are thinned down to about 53 μm and 76 μm, respectively, and a commercial beryllium bronze with the thickness of about 50 μm is used as the substrate. The effective volume of this device is 30.6 mm3. The harvester with a tungsten proof mass generated the close-circuit peak-to-peak voltage of 53.1 V, the output power of 0.979 mW, and the power density of 31.99 mW/cm3 with the matching load resistance of 360 kΩ at the applied acceleration amplitude of 3.5 g and the applied frequency of 77.2 Hz. Meanwhile, in order to evaluate the stability, the device was measured continuously under applied acceleration amplitudes of 1.0 g and 3.5 g for one hour and demonstrated a good stability. 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The upper and lower PZT layers are thinned down to about 53 μm and 76 μm, respectively, and a commercial beryllium bronze with the thickness of about 50 μm is used as the substrate. The effective volume of this device is 30.6 mm3. The harvester with a tungsten proof mass generated the close-circuit peak-to-peak voltage of 53.1 V, the output power of 0.979 mW, and the power density of 31.99 mW/cm3 with the matching load resistance of 360 kΩ at the applied acceleration amplitude of 3.5 g and the applied frequency of 77.2 Hz. Meanwhile, in order to evaluate the stability, the device was measured continuously under applied acceleration amplitudes of 1.0 g and 3.5 g for one hour and demonstrated a good stability. 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subjects Acceleration
Amplitudes
Applied physics
Beryllium
Beryllium bronzes
Lead zirconate titanates
Light emitting diodes
Load matching
Load resistance
Microelectromechanical systems
Piezoelectricity
Stability analysis
Substrates
Thick films
Thin films
Tungsten
title High performance bimorph piezoelectric MEMS harvester via bulk PZT thick films on thin beryllium-bronze substrate
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