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Electrical characterization of MoS2 field-effect transistors with different dielectric polymer gate
The characteristics of MoS2-nanoflake field-effect transistors (FETs) were studied by analyzing the transfer curves in MoS2-FETs with ferroelectric and general polymers as the gate dielectric. A clear hysteresis, opposite to the electron trapping–detrapping effect in traditional MoS2-FETs, was obser...
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| Published in: | AIP advances 2017-06, Vol.7 (6), p.065121-065121-6 |
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| Main Authors: | , , , , , , , , , , , , , , , , |
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| cited_by | cdi_FETCH-LOGICAL-c393t-17e200afcd98f9407f67318b4746e3d1ad67ba4577a54839793b2ae58c32af293 |
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| container_end_page | 065121-6 |
| container_issue | 6 |
| container_start_page | 065121 |
| container_title | AIP advances |
| container_volume | 7 |
| creator | Liu, Lan Wang, Xudong Han, Li Tian, Bobo Chen, Yan Wu, Guangjian Li, Dan Yan, Mengge Wang, Tao Sun, Shuo Shen, Hong Lin, Tie Sun, Jinglan Duan, Chungang Wang, Jianlu Meng, Xiangjian Chu, Junhao |
| description | The characteristics of MoS2-nanoflake field-effect transistors (FETs) were studied by analyzing the transfer curves in MoS2-FETs with ferroelectric and general polymers as the gate dielectric. A clear hysteresis, opposite to the electron trapping–detrapping effect in traditional MoS2-FETs, was observed in the MoS2-FETs with ferroelectric poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] films. The effect carrier mobility of MoS2 nanoflakes reached approximately 95.6 cm2/Vs under the control of the polarization field of P(VDF-TrFE), whereas the effect carrier mobility was only approximately 15.3 cm2/Vs in MoS2-FETs with traditional dielectric poly(methyl methacrylate) (PMMA) films. Furthermore, the ferroelectric MoS2-FETs possess a higher ON/OFF resistance ratio (approximately 107) than do the PMMA MoS2-FETs (approximately 105). |
| doi_str_mv | 10.1063/1.4991843 |
| format | article |
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A clear hysteresis, opposite to the electron trapping–detrapping effect in traditional MoS2-FETs, was observed in the MoS2-FETs with ferroelectric poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] films. The effect carrier mobility of MoS2 nanoflakes reached approximately 95.6 cm2/Vs under the control of the polarization field of P(VDF-TrFE), whereas the effect carrier mobility was only approximately 15.3 cm2/Vs in MoS2-FETs with traditional dielectric poly(methyl methacrylate) (PMMA) films. Furthermore, the ferroelectric MoS2-FETs possess a higher ON/OFF resistance ratio (approximately 107) than do the PMMA MoS2-FETs (approximately 105).</description><identifier>ISSN: 2158-3226</identifier><identifier>EISSN: 2158-3226</identifier><identifier>DOI: 10.1063/1.4991843</identifier><identifier>CODEN: AAIDBI</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Carrier mobility ; Dielectrics ; Electrical properties ; Ferroelectric materials ; Ferroelectricity ; Field effect transistors ; Molybdenum disulfide ; Polymethyl methacrylate ; Semiconductor devices ; Transistors ; Vinylidene ; Vinylidene fluoride</subject><ispartof>AIP advances, 2017-06, Vol.7 (6), p.065121-065121-6</ispartof><rights>Author(s)</rights><rights>2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c393t-17e200afcd98f9407f67318b4746e3d1ad67ba4577a54839793b2ae58c32af293</citedby><cites>FETCH-LOGICAL-c393t-17e200afcd98f9407f67318b4746e3d1ad67ba4577a54839793b2ae58c32af293</cites><orcidid>0000-0002-4510-268X ; 0000-0003-4178-9362</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/adv/article-lookup/doi/10.1063/1.4991843$$EHTML$$P50$$Gscitation$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,27889,27923,27924,76279</link.rule.ids></links><search><creatorcontrib>Liu, Lan</creatorcontrib><creatorcontrib>Wang, Xudong</creatorcontrib><creatorcontrib>Han, Li</creatorcontrib><creatorcontrib>Tian, Bobo</creatorcontrib><creatorcontrib>Chen, Yan</creatorcontrib><creatorcontrib>Wu, Guangjian</creatorcontrib><creatorcontrib>Li, Dan</creatorcontrib><creatorcontrib>Yan, Mengge</creatorcontrib><creatorcontrib>Wang, Tao</creatorcontrib><creatorcontrib>Sun, Shuo</creatorcontrib><creatorcontrib>Shen, Hong</creatorcontrib><creatorcontrib>Lin, Tie</creatorcontrib><creatorcontrib>Sun, Jinglan</creatorcontrib><creatorcontrib>Duan, Chungang</creatorcontrib><creatorcontrib>Wang, Jianlu</creatorcontrib><creatorcontrib>Meng, Xiangjian</creatorcontrib><creatorcontrib>Chu, Junhao</creatorcontrib><title>Electrical characterization of MoS2 field-effect transistors with different dielectric polymer gate</title><title>AIP advances</title><description>The characteristics of MoS2-nanoflake field-effect transistors (FETs) were studied by analyzing the transfer curves in MoS2-FETs with ferroelectric and general polymers as the gate dielectric. A clear hysteresis, opposite to the electron trapping–detrapping effect in traditional MoS2-FETs, was observed in the MoS2-FETs with ferroelectric poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] films. The effect carrier mobility of MoS2 nanoflakes reached approximately 95.6 cm2/Vs under the control of the polarization field of P(VDF-TrFE), whereas the effect carrier mobility was only approximately 15.3 cm2/Vs in MoS2-FETs with traditional dielectric poly(methyl methacrylate) (PMMA) films. Furthermore, the ferroelectric MoS2-FETs possess a higher ON/OFF resistance ratio (approximately 107) than do the PMMA MoS2-FETs (approximately 105).</description><subject>Carrier mobility</subject><subject>Dielectrics</subject><subject>Electrical properties</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Field effect transistors</subject><subject>Molybdenum disulfide</subject><subject>Polymethyl methacrylate</subject><subject>Semiconductor devices</subject><subject>Transistors</subject><subject>Vinylidene</subject><subject>Vinylidene fluoride</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>AJDQP</sourceid><sourceid>DOA</sourceid><recordid>eNp9kU1rGzEQhkVpoMHJof9AkFMK6-rLK-lYTJoGHHJIehaz2pEts7FcSaEkvz6qbUpPncsMMw_vDO8Q8pmzOWe9_MrnylpulPxAzgVfmE4K0X_8p_5ELkvZshbKcmbUOfE3E_qao4eJ-g1k8BVzfIMa046mQO_To6Ah4jR2GEJDac2wK7HUlAv9HeuGjrENMu5qq_CkRvdpen3GTNdQ8YKcBZgKXp7yjPz8fvO0_NGtHm7vlt9WnZdW1o5rFIxB8KM1wSqmQ68lN4PSqkc5chh7PYBaaA0LZaTVVg4CcGG8FBCElTNyd9QdE2zdPsdnyK8uQXSHRsprB7lGP6EDqUVT8GYwQg3QDwqNahbKgQscWp6Rq6PWPqdfL1iq26aXvGvnO8F5z5mUVjXq-kj5nErJGP5u5cz9eYnj7vSSxn45ssXHevD3P_A7rFiKRg</recordid><startdate>201706</startdate><enddate>201706</enddate><creator>Liu, Lan</creator><creator>Wang, Xudong</creator><creator>Han, Li</creator><creator>Tian, Bobo</creator><creator>Chen, Yan</creator><creator>Wu, Guangjian</creator><creator>Li, Dan</creator><creator>Yan, Mengge</creator><creator>Wang, Tao</creator><creator>Sun, Shuo</creator><creator>Shen, Hong</creator><creator>Lin, Tie</creator><creator>Sun, Jinglan</creator><creator>Duan, Chungang</creator><creator>Wang, Jianlu</creator><creator>Meng, Xiangjian</creator><creator>Chu, Junhao</creator><general>American Institute of Physics</general><general>AIP Publishing LLC</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0002-4510-268X</orcidid><orcidid>https://orcid.org/0000-0003-4178-9362</orcidid></search><sort><creationdate>201706</creationdate><title>Electrical characterization of MoS2 field-effect transistors with different dielectric polymer gate</title><author>Liu, Lan ; Wang, Xudong ; Han, Li ; Tian, Bobo ; Chen, Yan ; Wu, Guangjian ; Li, Dan ; Yan, Mengge ; Wang, Tao ; Sun, Shuo ; Shen, Hong ; Lin, Tie ; Sun, Jinglan ; Duan, Chungang ; Wang, Jianlu ; Meng, Xiangjian ; Chu, Junhao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c393t-17e200afcd98f9407f67318b4746e3d1ad67ba4577a54839793b2ae58c32af293</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Carrier mobility</topic><topic>Dielectrics</topic><topic>Electrical properties</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>Field effect transistors</topic><topic>Molybdenum disulfide</topic><topic>Polymethyl methacrylate</topic><topic>Semiconductor devices</topic><topic>Transistors</topic><topic>Vinylidene</topic><topic>Vinylidene fluoride</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Lan</creatorcontrib><creatorcontrib>Wang, Xudong</creatorcontrib><creatorcontrib>Han, Li</creatorcontrib><creatorcontrib>Tian, Bobo</creatorcontrib><creatorcontrib>Chen, Yan</creatorcontrib><creatorcontrib>Wu, Guangjian</creatorcontrib><creatorcontrib>Li, Dan</creatorcontrib><creatorcontrib>Yan, Mengge</creatorcontrib><creatorcontrib>Wang, Tao</creatorcontrib><creatorcontrib>Sun, Shuo</creatorcontrib><creatorcontrib>Shen, Hong</creatorcontrib><creatorcontrib>Lin, Tie</creatorcontrib><creatorcontrib>Sun, Jinglan</creatorcontrib><creatorcontrib>Duan, Chungang</creatorcontrib><creatorcontrib>Wang, Jianlu</creatorcontrib><creatorcontrib>Meng, Xiangjian</creatorcontrib><creatorcontrib>Chu, Junhao</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>AIP advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Lan</au><au>Wang, Xudong</au><au>Han, Li</au><au>Tian, Bobo</au><au>Chen, Yan</au><au>Wu, Guangjian</au><au>Li, Dan</au><au>Yan, Mengge</au><au>Wang, Tao</au><au>Sun, Shuo</au><au>Shen, Hong</au><au>Lin, Tie</au><au>Sun, Jinglan</au><au>Duan, Chungang</au><au>Wang, Jianlu</au><au>Meng, Xiangjian</au><au>Chu, Junhao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical characterization of MoS2 field-effect transistors with different dielectric polymer gate</atitle><jtitle>AIP advances</jtitle><date>2017-06</date><risdate>2017</risdate><volume>7</volume><issue>6</issue><spage>065121</spage><epage>065121-6</epage><pages>065121-065121-6</pages><issn>2158-3226</issn><eissn>2158-3226</eissn><coden>AAIDBI</coden><abstract>The characteristics of MoS2-nanoflake field-effect transistors (FETs) were studied by analyzing the transfer curves in MoS2-FETs with ferroelectric and general polymers as the gate dielectric. A clear hysteresis, opposite to the electron trapping–detrapping effect in traditional MoS2-FETs, was observed in the MoS2-FETs with ferroelectric poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] films. The effect carrier mobility of MoS2 nanoflakes reached approximately 95.6 cm2/Vs under the control of the polarization field of P(VDF-TrFE), whereas the effect carrier mobility was only approximately 15.3 cm2/Vs in MoS2-FETs with traditional dielectric poly(methyl methacrylate) (PMMA) films. Furthermore, the ferroelectric MoS2-FETs possess a higher ON/OFF resistance ratio (approximately 107) than do the PMMA MoS2-FETs (approximately 105).</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4991843</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-4510-268X</orcidid><orcidid>https://orcid.org/0000-0003-4178-9362</orcidid><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 2158-3226 |
| ispartof | AIP advances, 2017-06, Vol.7 (6), p.065121-065121-6 |
| issn | 2158-3226 2158-3226 |
| language | eng |
| recordid | cdi_scitation_primary_10_1063_1_4991843 |
| source | Full-Text Journals in Chemistry (Open access); AIP Open Access Journals |
| subjects | Carrier mobility Dielectrics Electrical properties Ferroelectric materials Ferroelectricity Field effect transistors Molybdenum disulfide Polymethyl methacrylate Semiconductor devices Transistors Vinylidene Vinylidene fluoride |
| title | Electrical characterization of MoS2 field-effect transistors with different dielectric polymer gate |
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