Transverse Kerr effect in magnetic (Ga, Mn)As-based semiconductors and its applicability in waveguide isolators

We report on the measurement of transverse Kerr effect in a diluted magnetic semiconductor Ga1−x Mn x As in visible and near infra-red spectral ranges. The relative change of reflectivity upon the change of the magnetization orientation is as large as 2%, the same order of magnitude as the response...

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Bibliographic Details
Published in:Journal of applied physics 2017-07, Vol.122 (2)
Main Authors: Wagenknecht, D., Schmoranzerová, E., Trojánek, F., Němec, P., Ostatnický, T.
Format: Article
Language:English
Subjects:
Applied physics
Ferromagnetism
Isolators
Magnetic semiconductors
Mathematical models
Planar waveguides
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Summary:We report on the measurement of transverse Kerr effect in a diluted magnetic semiconductor Ga1−x Mn x As in visible and near infra-red spectral ranges. The relative change of reflectivity upon the change of the magnetization orientation is as large as 2%, the same order of magnitude as the response of ferromagnetic metals in the visible light. The experimental data are modeled by theoretical calculations, showing a very good match between the theory and the experiment. We further use the theoretical model in order to predict nonreciprocal losses in a planar waveguide. The predicted nonreciprocal losses are an order of magnitude larger as compared to devices with a Co/Fe ferromagnetic layer reported so far.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4992126