Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors

We present single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). They are formed in the SiC/SiO2 interface regions of wet-oxidation C-face 4H-SiC MOSFETs and were not found in other C-face and Si-face MOSFETs. Their bright room-temperature phot...

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Bibliographic Details
Published in:Applied physics letters 2018-01, Vol.112 (3)
Main Authors: Abe, Y., Umeda, T., Okamoto, M., Kosugi, R., Harada, S., Haruyama, M., Kada, W., Hanaizumi, O., Onoda, S., Ohshima, T.
Format: Article
Language:English
Subjects:
Applied physics
Dependence
Field effect transistors
MOSFETs
Photoluminescence
Quantum theory
Semiconductor devices
Silicon carbide
Silicon dioxide
Transistors
Wet oxidation
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Summary:We present single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). They are formed in the SiC/SiO2 interface regions of wet-oxidation C-face 4H-SiC MOSFETs and were not found in other C-face and Si-face MOSFETs. Their bright room-temperature photoluminescence (PL) was observed in the range from 550 to 750 nm and revealed variable multi-peak structures as well as variable peak shifts. We characterized a wide variety of their PL spectra as the inevitable variation of local atomic structures at the interface. Their polarization dependence indicates that they are formed at the SiC side of the interface. We also demonstrate that it is possible to switch on/off the SPSs by a bias voltage of the MOSFET.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4994241