Multi-resonance frequency spin dependent charge pumping and spin dependent recombination - applied to the 4H-SiC/SiO2 interface

• Published in: Journal of applied physics 2017-12, Vol.122 (23)
• Main Authors: Anders, M. A., Lenahan, P. M., Lelis, A. J.
• Format: Article
• Language: English
• Subjects: Annealing; Defects; Energy levels; Extremely low frequencies; Field effect transistors; Magnetic resonance; MOSFETs; Nitrogen; Orbital resonances (celestial mechanics); Oxidation; Pumping; Semiconductor devices; Silicon dioxide; Software radio; Spin-orbit interactions; Vacancies
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.4996298

We report on a new electrically detected magnetic resonance (EDMR) approach involving spin dependent charge pumping (SDCP) and spin dependent recombination (SDR) at high (K band, about 16 GHz) and ultra-low (360 and 85 MHz) magnetic resonance frequencies to investigate the dielectric/semiconductor interface in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). A comparison of SDCP and SDR allows for a comparison of deep level defects and defects with energy levels throughout most of the bandgap. Additionally, a comparison of high frequency and ultra-low frequency measurements allows for (1) the partial separation of spin-orbit coupling and hyperfine effects on magnetic resonance spectra, (2) the observation of otherwise forbidden half-field effects, which make EDMR, at least, in principle, quantitative, and (3) the observation of Breit-Rabi shifts in superhyperfine measurements. (Observation of the Breit-Rabi shift helps in both the assignment and the measurement of superhyperfine parameters.) We find that, as earlier work also indicates, the SiC silicon vacancy is the dominating defect in n-MOSFETs with as-grown oxides and that post-oxidation NO anneals significantly reduce their population. In addition, we provide strong evidence that NO anneals result in the presence of nitrogen very close to a large fraction of the silicon vacancies. The results indicate that the presence of nearby nitrogen significantly shifts the silicon vacancy energy levels. Our results also show that the introduction of nitrogen introduces a disorder at the interface. This nitrogen induced disorder may provide at least a partial explanation for the relatively modest improvement in mobility after the NO anneals. Finally, we compare the charge pumping and SDCP response as a function of gate amplitude and charge pumping frequency.