Ultrathin GaGeTe p-type transistors

We exfoliated bulk GaGeTe crystals down to ultrathin flakes using the scotch tape method and fabricated field effect transistors (FETs). The GaGeTe FETs display a p-type behavior with drain current modulation on the order of 103, hole mobility of 0.45 cm2 V−1 s−1, and photoresponsivity of 3.6 A W−1...

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Bibliographic Details
Published in:Applied physics letters 2017-11, Vol.111 (20)
Main Authors: Wang, Weike, Li, Liang, Zhang, Zhitao, Yang, Jiyong, Tang, Dongsheng, Zhai, Tianyou
Format: Article
Language:English
Subjects:
Applied physics
Current modulation
Field effect transistors
Hole mobility
Semiconductor devices
Transistors
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Summary:We exfoliated bulk GaGeTe crystals down to ultrathin flakes using the scotch tape method and fabricated field effect transistors (FETs). The GaGeTe FETs display a p-type behavior with drain current modulation on the order of 103, hole mobility of 0.45 cm2 V−1 s−1, and photoresponsivity of 3.6 A W−1 at room temperature. These findings suggest that the layered GaGeTe is a promising 2D semiconductor for fabricating devices, such as transistors and photodetectors.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4998350