All-optical lithography process for contacting nanometer precision donor devices

We describe an all-optical lithography process that can make electrical contact to nanometer-precision donor devices fabricated in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment ma...

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Bibliographic Details
Published in:Applied physics letters 2017-11, Vol.111 (19)
Main Authors: Ward, D. R., Marshall, M. T., Campbell, D. M., Lu, T. M., Koepke, J. C., Scrymgeour, D. A., Bussmann, E., Misra, S.
Format: Article
Language:English
Subjects:
Applied physics
Chemical compounds
Circuits
Electric contacts
Lithography
MATERIALS SCIENCE
Nano-wires
Photolithography
Scanning tunneling microscopy
Scanning tunnelling microscopy
Viability
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Summary:We describe an all-optical lithography process that can make electrical contact to nanometer-precision donor devices fabricated in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4998639