Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

We report a systematic study of high quality GaAs growths on on-axis (001) GaP/Si substrates using molecular beam epitaxy. Various types of dislocation filter layers and growth temperatures of initial GaAs layer were investigated to reduce the threading dislocation densities in GaAs on GaP/Si. Elect...

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Bibliographic Details
Published in:Journal of applied physics 2017-12, Vol.122 (22)
Main Authors: Jung, Daehwan, Callahan, Patrick G., Shin, Bongki, Mukherjee, Kunal, Gossard, Arthur C., Bowers, John E.
Format: Article
Language:English
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Summary:We report a systematic study of high quality GaAs growths on on-axis (001) GaP/Si substrates using molecular beam epitaxy. Various types of dislocation filter layers and growth temperatures of initial GaAs layer were investigated to reduce the threading dislocation densities in GaAs on GaP/Si. Electron channeling contrast imaging techniques revealed that an optimized GaAs buffer layer with thermal cycle annealing and InGaAs/GaAs dislocation filter layers has a threading dislocation density of 7.2 × 106 cm−2, which is a factor of 40 lower than an unoptimized GaAs buffer. The root-mean-square surface roughness was greatly decreased from 7.8 nm to 2.9 nm after the optimization process. A strong enhancement in photoluminescence intensity indicates that the optimized GaAs template grown on on-axis (001) GaP/Si substrates is a promising virtual substrate for Si-based optoelectronic devices.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5001360