Enhanced performance of 17.7 GHz SAW devices based on AlN/diamond/Si layered structure with embedded nanotransducer

• Published in: Applied physics letters 2017-12, Vol.111 (25)
• Main Authors: Wang, Lei, Chen, Shuming, Zhang, Jinying, Xiao, Dingbang, Han, Kaifeng, Ning, Xi, Liu, Jingtian, Chen, Zhe, Zhou, Jian
• Format: Article
• Language: English
• Subjects: Aluminum nitride; Applied physics; Coupling coefficients; Devices; Diamonds; Integrated circuits; Interdigital transducers; Millimeter waves; Performance enhancement; Phase velocity; Resonant frequencies; Silicon substrates; Surface acoustic wave devices; Surface acoustic waves
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.5006884

Surface acoustic wave (SAW) devices using embedded interdigital transducers (IDTs) on an AlN/diamond/Si layered substrate are fabricated, and their performances are investigated. The Sezawa mode is the dominant resonance with the highest resonant frequency up to 17.7 GHz, a signal amplitude of 20 dB, and an electromechanical coupling coefficient of 0.92%. Comparing these SAW devices with those having the conventional IDTs on the same layered structure, the output SAW power and resonant frequency of devices are improved by 10.7% and 1.1%, respectively, for the embedded IDT devices. This is because the different field distribution leads to the different Bragg reflection and phase velocity for the two types of IDTs. The radiation frequency characteristics indicate that the advantages of the embedded IDTs would be useful for high frequency, high power applications such as monolithic integrated millimeter-wave integrated circuit and high speed communications.