Low injection losses in InGaN/GaN LEDs: The correlation of photoluminescence, electroluminescence, and photocurrent measurements

Time-resolved photoluminescence spectroscopy and photocurrent measurements at quasi-resonant laser excitation are combined with electroluminescence studies to get access to low injection losses in high power InGaN/GaN LEDs. A direct relation between electroluminescence and photoluminescence efficien...

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Published in:Journal of applied physics 2018-06, Vol.123 (21), p.214502
Main Authors: Quitsch, Wolf-Alexander, Sager, Daniel, Loewenich, Moritz, Meyer, Tobias, Hahn, Berthold, Bacher, Gerd
Format: Article
Language:English
Subjects:
Applied physics
Electroluminescence
Excitation
Gallium nitrides
Indium gallium nitrides
Photoelectric effect
Photoelectric emission
Photoluminescence
Resonant tunneling
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description Time-resolved photoluminescence spectroscopy and photocurrent measurements at quasi-resonant laser excitation are combined with electroluminescence studies to get access to low injection losses in high power InGaN/GaN LEDs. A direct relation between electroluminescence and photoluminescence efficiencies with photocurrent is found, indicating that tunneling losses play a key role in the low injection regime. This assertion is confirmed by comparing photoluminescence efficiencies under open and closed circuit conditions. Experiments under various excitation wavelengths hint at the role of resonant tunneling processes in the efficiency losses.
doi_str_mv 10.1063/1.5022026
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source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
subjects Applied physics
Electroluminescence
Excitation
Gallium nitrides
Indium gallium nitrides
Photoelectric effect
Photoelectric emission
Photoluminescence
Resonant tunneling
title Low injection losses in InGaN/GaN LEDs: The correlation of photoluminescence, electroluminescence, and photocurrent measurements
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