Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region

Optical measurements of transmittance in the far infrared region performed on crystalline silicon wafers exhibit partially coherent interference effects appropriate for the determination of thicknesses of the wafers. The knowledge of accurate spectral and temperature dependencies of the optical cons...

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Bibliographic Details
Published in:Journal of applied physics 2018-05, Vol.123 (18)
Main Authors: Franta, Daniel, Franta, Pavel, Vohánka, Jiří, Čermák, Martin, Ohlídal, Ivan
Format: Article
Language:English
Subjects:
Applied physics
Crystal structure
Crystallinity
High temperature
Interference
Optical measurement
Photovoltaic cells
Silicon
Silicon wafers
Temperature dependence
Thermal expansion
Wafers
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Summary:Optical measurements of transmittance in the far infrared region performed on crystalline silicon wafers exhibit partially coherent interference effects appropriate for the determination of thicknesses of the wafers. The knowledge of accurate spectral and temperature dependencies of the optical constants of crystalline silicon in this spectral region is crucial for the determination of its thickness and vice versa. The recently published temperature dependent dispersion model of crystalline silicon is suitable for this purpose. Because the linear thermal expansion of crystalline silicon is known, the temperatures of the wafers can be determined with high precision from the evolution of the interference patterns at elevated temperatures.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5026195