Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region

Optical measurements of transmittance in the far infrared region performed on crystalline silicon wafers exhibit partially coherent interference effects appropriate for the determination of thicknesses of the wafers. The knowledge of accurate spectral and temperature dependencies of the optical cons...

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Published in:Journal of applied physics 2018-05, Vol.123 (18)
Main Authors: Franta, Daniel, Franta, Pavel, Vohánka, Jiří, Čermák, Martin, Ohlídal, Ivan
Format: Article
Language:English
Subjects:
Applied physics
Crystal structure
Crystallinity
High temperature
Interference
Optical measurement
Photovoltaic cells
Silicon
Silicon wafers
Temperature dependence
Thermal expansion
Wafers
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cited_by cdi_FETCH-LOGICAL-c292t-a5e456378673749c143f4a111e12142a44c013cf567e50baa81924fc9bbe5c1d3
cites cdi_FETCH-LOGICAL-c292t-a5e456378673749c143f4a111e12142a44c013cf567e50baa81924fc9bbe5c1d3
container_end_page
container_issue 18
container_start_page
container_title Journal of applied physics
container_volume 123
creator Franta, Daniel
Franta, Pavel
Vohánka, Jiří
Čermák, Martin
Ohlídal, Ivan
description Optical measurements of transmittance in the far infrared region performed on crystalline silicon wafers exhibit partially coherent interference effects appropriate for the determination of thicknesses of the wafers. The knowledge of accurate spectral and temperature dependencies of the optical constants of crystalline silicon in this spectral region is crucial for the determination of its thickness and vice versa. The recently published temperature dependent dispersion model of crystalline silicon is suitable for this purpose. Because the linear thermal expansion of crystalline silicon is known, the temperatures of the wafers can be determined with high precision from the evolution of the interference patterns at elevated temperatures.
doi_str_mv 10.1063/1.5026195
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fullrecord <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_scitation_primary_10_1063_1_5026195</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2088680112</sourcerecordid><originalsourceid>FETCH-LOGICAL-c292t-a5e456378673749c143f4a111e12142a44c013cf567e50baa81924fc9bbe5c1d3</originalsourceid><addsrcrecordid>eNp9kM1LAzEQxYMoWKsH_4OAJ4WtmWyymxylfkLBi56XNJ1o6n6ZpEhv_ulG27OnGWZ-7z14hJwDmwGrymuYScYr0PKATIApXdRSskMyYYxDoXStj8lJjGvGAFSpJ-T7FhOGzvcm-aGng6Pp3duPHmPESE2_ogm7EYNJm5AP-W_DNibTtr5HGn3rbZZ9GYchUheGjg5j8ta0tEMTs6bDPkXq--yL1JmQVxdMwBUN-JYjT8mRM23Es_2cktf7u5f5Y7F4fnia3ywKyzVPhZEoZFXWqqrLWmgLonTCAAACB8GNEJZBaZ2sapRsaYwCzYWzerlEaWFVTsnFzncMw-cGY2rWwyb0ObLhTKlK5UZ4pi53lA1DjAFdMwbfmbBtgDW_BTfQ7AvO7NWOjdanv_r-gX8A3XB8mA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2088680112</pqid></control><display><type>article</type><title>Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Franta, Daniel ; Franta, Pavel ; Vohánka, Jiří ; Čermák, Martin ; Ohlídal, Ivan</creator><creatorcontrib>Franta, Daniel ; Franta, Pavel ; Vohánka, Jiří ; Čermák, Martin ; Ohlídal, Ivan</creatorcontrib><description>Optical measurements of transmittance in the far infrared region performed on crystalline silicon wafers exhibit partially coherent interference effects appropriate for the determination of thicknesses of the wafers. The knowledge of accurate spectral and temperature dependencies of the optical constants of crystalline silicon in this spectral region is crucial for the determination of its thickness and vice versa. The recently published temperature dependent dispersion model of crystalline silicon is suitable for this purpose. Because the linear thermal expansion of crystalline silicon is known, the temperatures of the wafers can be determined with high precision from the evolution of the interference patterns at elevated temperatures.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.5026195</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Crystal structure ; Crystallinity ; High temperature ; Interference ; Optical measurement ; Photovoltaic cells ; Silicon ; Silicon wafers ; Temperature dependence ; Thermal expansion ; Wafers</subject><ispartof>Journal of applied physics, 2018-05, Vol.123 (18)</ispartof><rights>Author(s)</rights><rights>2018 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c292t-a5e456378673749c143f4a111e12142a44c013cf567e50baa81924fc9bbe5c1d3</citedby><cites>FETCH-LOGICAL-c292t-a5e456378673749c143f4a111e12142a44c013cf567e50baa81924fc9bbe5c1d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids></links><search><creatorcontrib>Franta, Daniel</creatorcontrib><creatorcontrib>Franta, Pavel</creatorcontrib><creatorcontrib>Vohánka, Jiří</creatorcontrib><creatorcontrib>Čermák, Martin</creatorcontrib><creatorcontrib>Ohlídal, Ivan</creatorcontrib><title>Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region</title><title>Journal of applied physics</title><description>Optical measurements of transmittance in the far infrared region performed on crystalline silicon wafers exhibit partially coherent interference effects appropriate for the determination of thicknesses of the wafers. The knowledge of accurate spectral and temperature dependencies of the optical constants of crystalline silicon in this spectral region is crucial for the determination of its thickness and vice versa. The recently published temperature dependent dispersion model of crystalline silicon is suitable for this purpose. Because the linear thermal expansion of crystalline silicon is known, the temperatures of the wafers can be determined with high precision from the evolution of the interference patterns at elevated temperatures.</description><subject>Applied physics</subject><subject>Crystal structure</subject><subject>Crystallinity</subject><subject>High temperature</subject><subject>Interference</subject><subject>Optical measurement</subject><subject>Photovoltaic cells</subject><subject>Silicon</subject><subject>Silicon wafers</subject><subject>Temperature dependence</subject><subject>Thermal expansion</subject><subject>Wafers</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp9kM1LAzEQxYMoWKsH_4OAJ4WtmWyymxylfkLBi56XNJ1o6n6ZpEhv_ulG27OnGWZ-7z14hJwDmwGrymuYScYr0PKATIApXdRSskMyYYxDoXStj8lJjGvGAFSpJ-T7FhOGzvcm-aGng6Pp3duPHmPESE2_ogm7EYNJm5AP-W_DNibTtr5HGn3rbZZ9GYchUheGjg5j8ta0tEMTs6bDPkXq--yL1JmQVxdMwBUN-JYjT8mRM23Es_2cktf7u5f5Y7F4fnia3ywKyzVPhZEoZFXWqqrLWmgLonTCAAACB8GNEJZBaZ2sapRsaYwCzYWzerlEaWFVTsnFzncMw-cGY2rWwyb0ObLhTKlK5UZ4pi53lA1DjAFdMwbfmbBtgDW_BTfQ7AvO7NWOjdanv_r-gX8A3XB8mA</recordid><startdate>20180514</startdate><enddate>20180514</enddate><creator>Franta, Daniel</creator><creator>Franta, Pavel</creator><creator>Vohánka, Jiří</creator><creator>Čermák, Martin</creator><creator>Ohlídal, Ivan</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20180514</creationdate><title>Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region</title><author>Franta, Daniel ; Franta, Pavel ; Vohánka, Jiří ; Čermák, Martin ; Ohlídal, Ivan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c292t-a5e456378673749c143f4a111e12142a44c013cf567e50baa81924fc9bbe5c1d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Applied physics</topic><topic>Crystal structure</topic><topic>Crystallinity</topic><topic>High temperature</topic><topic>Interference</topic><topic>Optical measurement</topic><topic>Photovoltaic cells</topic><topic>Silicon</topic><topic>Silicon wafers</topic><topic>Temperature dependence</topic><topic>Thermal expansion</topic><topic>Wafers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Franta, Daniel</creatorcontrib><creatorcontrib>Franta, Pavel</creatorcontrib><creatorcontrib>Vohánka, Jiří</creatorcontrib><creatorcontrib>Čermák, Martin</creatorcontrib><creatorcontrib>Ohlídal, Ivan</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Franta, Daniel</au><au>Franta, Pavel</au><au>Vohánka, Jiří</au><au>Čermák, Martin</au><au>Ohlídal, Ivan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region</atitle><jtitle>Journal of applied physics</jtitle><date>2018-05-14</date><risdate>2018</risdate><volume>123</volume><issue>18</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Optical measurements of transmittance in the far infrared region performed on crystalline silicon wafers exhibit partially coherent interference effects appropriate for the determination of thicknesses of the wafers. The knowledge of accurate spectral and temperature dependencies of the optical constants of crystalline silicon in this spectral region is crucial for the determination of its thickness and vice versa. The recently published temperature dependent dispersion model of crystalline silicon is suitable for this purpose. Because the linear thermal expansion of crystalline silicon is known, the temperatures of the wafers can be determined with high precision from the evolution of the interference patterns at elevated temperatures.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5026195</doi><tpages>11</tpages></addata></record>
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source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
subjects Applied physics
Crystal structure
Crystallinity
High temperature
Interference
Optical measurement
Photovoltaic cells
Silicon
Silicon wafers
Temperature dependence
Thermal expansion
Wafers
title Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T00%3A36%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Determination%20of%20thicknesses%20and%20temperatures%20of%20crystalline%20silicon%20wafers%20from%20optical%20measurements%20in%20the%20far%20infrared%20region&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Franta,%20Daniel&rft.date=2018-05-14&rft.volume=123&rft.issue=18&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.5026195&rft_dat=%3Cproquest_scita%3E2088680112%3C/proquest_scita%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c292t-a5e456378673749c143f4a111e12142a44c013cf567e50baa81924fc9bbe5c1d3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2088680112&rft_id=info:pmid/&rfr_iscdi=true