Optical signatures of deep level defects in Ga2O3

We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to measure the effects of near-surface plasma processing and neutron irradiation on native point defects in β-Ga2O3. The near-surface sensitivity and depth resolution of these optical techniques enabled us...

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Bibliographic Details
Published in:Applied physics letters 2018-06, Vol.112 (24)
Main Authors: Gao, Hantian, Muralidharan, Shreyas, Pronin, Nicholas, Karim, Md Rezaul, White, Susan M., Asel, Thaddeus, Foster, Geoffrey, Krishnamoorthy, Sriram, Rajan, Siddharth, Cao, Lei R., Higashiwaki, Masataka, von Wenckstern, Holger, Grundmann, Marius, Zhao, Hongping, Look, David C., Brillson, Leonard J.
Format: Article
Language:English
Subjects:
Applied physics
Cathodoluminescence
Energy levels
Gallium oxides
Neutron irradiation
Optics
Plasma processing
Point defects
Spectrum analysis
Vacancies
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Summary:We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to measure the effects of near-surface plasma processing and neutron irradiation on native point defects in β-Ga2O3. The near-surface sensitivity and depth resolution of these optical techniques enabled us to identify spectral changes associated with removing or creating these defects, leading to identification of one oxygen vacancy-related and two gallium vacancy-related energy levels in the β-Ga2O3 bandgap. The combined near-surface detection and processing of Ga2O3 suggests an avenue for identifying the physical nature and reducing the density of native point defects in this and other semiconductors.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5026770