Evaluation of GaAsSb/AlGaAs strained superlattice photocathodes

GaAs-class strained superlattice (SSL) photocathodes can provide electron beams with electron spin polarization (ESP) exceeding the theoretical maximum 50% of bulk GaAs. In this paper, we describe the evaluation of a SSL structure composed of GaAsSb/AlGaAs and grown on a GaAs substrate. Theoretical...

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Bibliographic Details
Published in:AIP advances 2018-07, Vol.8 (7), p.075308-075308-8
Main Authors: Liu, Wei, Chen, Yiqiao, Moy, Aaron, Poelker, Matthew, Stutzman, Marcy, Zhang, Shukui
Format: Article
Language:English
Subjects:
Aluminum gallium arsenides
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Electron beams
Electron spin
Electrons
Gallium arsenide
Photocathodes
Polarization (spin alignment)
Substrates
Superlattices
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Summary:GaAs-class strained superlattice (SSL) photocathodes can provide electron beams with electron spin polarization (ESP) exceeding the theoretical maximum 50% of bulk GaAs. In this paper, we describe the evaluation of a SSL structure composed of GaAsSb/AlGaAs and grown on a GaAs substrate. Theoretical analysis and numerical calculations show GaAsSb/AlGaAs SSL structures have the largest heavy-hole and light-hole energy splitting of all existing GaAs-class SSL structures, which should lead to the highest initial ESP. Five GaAsSb/AlGaAs SSL photocathode samples with different constituent species concentrations, number of layer pairs, and layer thicknesses were fabricated and evaluated. The highest ESP was ∼77% obtained from a photocathode based on the GaAsSb0.15/Al0.38GaAs (1.55/4.1 nm ×15 layer pairs) SSL structure.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.5040593