High-field electron mobility model of vertical charge transport in Al/Al2O3/GaN/AlGaN/GaN heterostructures

We present a high-field electron mobility model of vertical charge transport in Ir/Al /Al2O3/GaN/AlGaN/GaN heterostructures that is, in detail, different from the standard high-field mobility model. The standard model was tailor-made for a 2DEG channel. The wurtzite group-III nitrides GaN and AlN ar...

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Bibliographic Details
Main Authors: Racko, Juraj, Mikolášek, Miroslav, Lalinský, Tibor, Grmanová, Alena, Benko, Peter, Kadlečíková, Magdaléna, Harmatha, Ladislav, Breza, Juraj
Format: Conference Proceeding
Language:English
Subjects:
Aluminum gallium nitrides
Aluminum oxide
Charge transport
Crystal lattices
Deceleration
Electric fields
Electron mobility
Electron transport
Gallium nitrides
Heterostructures
Piezoelectricity
Unit cell
Wurtzite
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Summary:We present a high-field electron mobility model of vertical charge transport in Ir/Al /Al2O3/GaN/AlGaN/GaN heterostructures that is, in detail, different from the standard high-field mobility model. The standard model was tailor-made for a 2DEG channel. The wurtzite group-III nitrides GaN and AlN are tetrahedrally coordinated semiconductors with a hexagonal Bravais lattice with four atoms per unit cell. The specific property of this crystal lattice is the induced sheet charge due to spontaneous and piezoelectric polarizations. The sheet charge results in an internal electric field in the crystal lattice. The internal electric field either decelerates or accelerates the vertical electron transport through GaN/AlGaN/GaN heterostructures.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.5048890