The overheating effects in germanium quantum well with two subbands occupied

The charge carrier overheating effect was studied in the p-type Si0.4Ge0.6/Ge/Si0.4Ge0.6 heterostructure with two subband occupy. The temperature dependences of hole-phonon relaxation time τ h - ph sat weak magnetic fields demonstrated transition of the 2D system from regime of “partial inelasticity...

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Bibliographic Details
Published in:Low temperature physics (Woodbury, N.Y.) N.Y.), 2018-08, Vol.44 (8), p.797-802
Main Authors: Berkutov, I. B., Andrievskii, V. V., Kolesnichenko, Yu. A., Komnik, Yu. F., Mironov, O. A.
Format: Article
Language:English
Subjects:
Current carriers
Dependence
Elasticity
Electromagnetism
Germanium
Insulators
Magnetic fields
Overheating
Quantum wells
Relaxation time
Transport phenomena
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Summary:The charge carrier overheating effect was studied in the p-type Si0.4Ge0.6/Ge/Si0.4Ge0.6 heterostructure with two subband occupy. The temperature dependences of hole-phonon relaxation time τ h - ph sat weak magnetic fields demonstrated transition of the 2D system from regime of “partial inelasticity” characterized by dependence τ h - ph − 1 ∝ T2 to regime of small-angle scattering, described by dependence τ h - ph − 1 ∝ T5 with temperature increase. But in higher magnetic fields the dependence τ h - ph − 1 ∝ T3 manifests itself on dependences τh-ph(Th-ph). The possible explanations of such dependences are discussed. PACS: 72.15.Lh Relaxation times and mean free path; 72.20. My Galvanomagnetic and other magnetotransport effects; 72.20. −i Conductivity phenomena in semiconductors and insulators.
ISSN:1063-777X
1090-6517
DOI:10.1063/1.5049161