Optical and electrical properties of superlattice and photonic metamorphic structures for high-performance solar cells

Presented are results of the investigation of optical and electrical parameters of In-Al-Ga-As nanoscale layers with the In content of 3–24 % obtained by spectral reflectometry methods. An ingenious approach based on analyzing minima and maxima positions in a reflection spectrum from a distributed B...

Full description

Saved in:
Bibliographic Details
Main Authors: Emelyanov, Viktor M., Mintairov, Mikhail A., Kalyuzhnyy, Nikolay A., Mintairov, Sergey A., Shvarts, Maxim Z.
Format: Conference Proceeding
Language:English
Subjects:
Converters
Electrical properties
Impact resistance
Maxima
Optical properties
Photonics
Photovoltaic cells
Reflection
Reflectometry
Solar cells
Superlattices
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Presented are results of the investigation of optical and electrical parameters of In-Al-Ga-As nanoscale layers with the In content of 3–24 % obtained by spectral reflectometry methods. An ingenious approach based on analyzing minima and maxima positions in a reflection spectrum from a distributed Bragg reflector (DBR) has been proposed. For this purpose, DBR metamorphic (MM) structures have been specially fabricated by the MOVPE technique, which included 12–20 pairs of InxGa1-xAs/InxAl1-xAs layers with a reflection maximum within 800–2000 nm. For investigating the current flow in a MM DBR, special test structures of single-junction metamorphic PV converters were also fabricated. The series resistance in structures including superlattices of a MM buffer and a DBR has been studied. It has been established that the DBR series resistance increases exponentially with the In content. The impact of the resistance becomes noticeable at illumination intensities greater than 1 sun at In content of 21–24 %.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.5053541