Formation of electronic defects in crystalline silicon during hydrogen plasma treatment

Electronic defects in crystalline silicon induced by hydrogen plasma treatments are studied, based on in-situ photocurrent measurements and real-time spectroscopic ellipsometry. The electronic defects are generated by the plasma treatments, and annihilated partially by postannealing. The generation...

Full description

Saved in:
Bibliographic Details
Published in:AIP advances 2019-04, Vol.9 (4), p.045110-045110-5
Main Authors: Nunomura, Shota, Sakata, Isao, Matsubara, Koji
Format: Article
Language:English
Subjects:
Bulk density
Crystal defects
Crystal structure
Crystallinity
Defect annealing
Defects
Hydrogen plasma
Photoelectric effect
Photoelectric emission
Plasma
Silicon
Spectroellipsometry
Surface layers
Surface structure
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Electronic defects in crystalline silicon induced by hydrogen plasma treatments are studied, based on in-situ photocurrent measurements and real-time spectroscopic ellipsometry. The electronic defects are generated by the plasma treatments, and annihilated partially by postannealing. The generation and annihilation of defects strongly depends on both the treatment time and the annealing temperature. A long-time plasma treatment results in the formation of the residual defects in the silicon bulk. The density of these defects is estimated to be of the order of 1013 cm−2. Interestingly, the electronic defects are formed even before a strong modification of the surface structure, i.e., the formation of a nanometer-scale disordered surface layer.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.5089202