AlxTe1−x selector with high ovonic threshold switching performance for memory crossbar arrays

We report the fabrication of a bidirectional selector based on threshold switching (TS) material AlxTe1−x. By modulating the composition and the thickness of the AlxTe1−x film layer, an optimized bidirectional selector with the advantages of being electroforming-free, with sufficient operating curre...

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Bibliographic Details
Published in:Applied physics letters 2019-04, Vol.114 (16)
Main Authors: Gao, Tian, Feng, Jie, Ma, Haili, Zhu, Xi, Ma, Zhixian
Format: Article
Language:English
Subjects:
Applied physics
Conduction model
Electric fields
Electroforming
Selectivity
Switching
Threshold voltage
Online Access:Get full text
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Summary:We report the fabrication of a bidirectional selector based on threshold switching (TS) material AlxTe1−x. By modulating the composition and the thickness of the AlxTe1−x film layer, an optimized bidirectional selector with the advantages of being electroforming-free, with sufficient operating current (1 mA), satisfactory selectivity (ca. 5.9 × 103), appropriately small threshold voltage (ca. ±0.7 V), and excellent switching uniformity was fabricated. The trap-limited conduction model was employed to explain the TS characteristics of the W/AlxTe1−x/W device. The application of a high electric field to the devices is considered to induce the tunneling of the high-electric field-derived carriers from deep traps to shallow traps, switching the device to the on-state.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5089818