Photocurrent measurements of InGaN/GaN quantum wells under hydrostatic and uniaxial pressure

Light emitting diode structures with InGaN quantum wells have been studied as a function of hydrostatic and uniaxial pressure (along the c-axis) under different values of reverse voltage. Photocurrent measurements (with light parallel to the epitaxial layers) allow determining energies in transverse...

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Bibliographic Details
Published in:Journal of applied physics 2019-03, Vol.125 (11)
Main Authors: Bercha, Artem, Trzeciakowski, Witold, Gładysiewicz-Kudrawiec, Marta, Ivonyak, Yurii, Grzanka, Szymon
Format: Article
Language:English
Subjects:
Applied physics
Band theory
Conduction bands
Electric fields
Epitaxial layers
Gallium nitrides
Indium gallium nitrides
Light emitting diodes
Photoelectric effect
Photoelectric emission
Polarization
Quantum wells
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Summary:Light emitting diode structures with InGaN quantum wells have been studied as a function of hydrostatic and uniaxial pressure (along the c-axis) under different values of reverse voltage. Photocurrent measurements (with light parallel to the epitaxial layers) allow determining energies in transverse electric (TE) and transverse magnetic (TM) polarizations, which we attribute to transitions from the heavy-hole (HH) and crystal-field split (CH) band to the conduction band. The comparison of theory and experiment suggests that the electric fields are about 25% lower than the calculated values. The transitions in TE polarization agree with the theoretical predictions, while those in TM polarization do not. In particular, the splittings between HH and CH bands are lower than the theoretical predictions.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5090099