Characterization of an InAs/GaSb type-II superlattice barrier photodetector operating in the LWIR domain

In this paper, structural, optical and electrical characterizations of longwave infrared barrier detectors based on the InAs/GaSb superlattice are reported and analyzed. The fabricated detectors exhibited a 50% cut-off wavelength around 10.5 μm at 80K measured by photoluminescence and spectral respo...

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Bibliographic Details
Published in:AIP advances 2019-05, Vol.9 (5), p.055012-055012-8
Main Authors: Alchaar, R., Rodriguez, J. B., Höglund, L., Naureen, S., Christol, P.
Format: Article
Language:English
Subjects:
Current voltage characteristics
Cut off wavelength
Dark current
Electrical measurement
Electronics
Engineering Sciences
Infrared detectors
Micro and nanotechnologies
Microelectronics
Optics
Photoluminescence
Photonic
Spectral sensitivity
Superlattices
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Summary:In this paper, structural, optical and electrical characterizations of longwave infrared barrier detectors based on the InAs/GaSb superlattice are reported and analyzed. The fabricated detectors exhibited a 50% cut-off wavelength around 10.5 μm at 80K measured by photoluminescence and spectral response. The dark current density was 8.4×10-4 A/cm2 at 80K and a performance analysis combining spectral response, dark current-voltage characteristic and capacitance-voltage measurement curves was performed to determine the operating bias and the dark current regimes at different biases. Dark current simulations were also performed to better understand limiting dark current mechanisms of the device performance.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.5094703