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Characterization of an InAs/GaSb type-II superlattice barrier photodetector operating in the LWIR domain

In this paper, structural, optical and electrical characterizations of longwave infrared barrier detectors based on the InAs/GaSb superlattice are reported and analyzed. The fabricated detectors exhibited a 50% cut-off wavelength around 10.5 μm at 80K measured by photoluminescence and spectral respo...

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Published in:AIP advances 2019-05, Vol.9 (5), p.055012-055012-8
Main Authors: Alchaar, R., Rodriguez, J. B., Höglund, L., Naureen, S., Christol, P.
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Language:English
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cited_by cdi_FETCH-LOGICAL-c427t-d7b677f94d97801e4a13435164afb41e356283039490c2a1011fc1c2c421a9ce3
cites cdi_FETCH-LOGICAL-c427t-d7b677f94d97801e4a13435164afb41e356283039490c2a1011fc1c2c421a9ce3
container_end_page 055012-8
container_issue 5
container_start_page 055012
container_title AIP advances
container_volume 9
creator Alchaar, R.
Rodriguez, J. B.
Höglund, L.
Naureen, S.
Christol, P.
description In this paper, structural, optical and electrical characterizations of longwave infrared barrier detectors based on the InAs/GaSb superlattice are reported and analyzed. The fabricated detectors exhibited a 50% cut-off wavelength around 10.5 μm at 80K measured by photoluminescence and spectral response. The dark current density was 8.4×10-4 A/cm2 at 80K and a performance analysis combining spectral response, dark current-voltage characteristic and capacitance-voltage measurement curves was performed to determine the operating bias and the dark current regimes at different biases. Dark current simulations were also performed to better understand limiting dark current mechanisms of the device performance.
doi_str_mv 10.1063/1.5094703
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fullrecord <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_scitation_primary_10_1063_1_5094703</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><doaj_id>oai_doaj_org_article_e7e9970ed8dc4b289eeb2ee2509553d0</doaj_id><sourcerecordid>2225429204</sourcerecordid><originalsourceid>FETCH-LOGICAL-c427t-d7b677f94d97801e4a13435164afb41e356283039490c2a1011fc1c2c421a9ce3</originalsourceid><addsrcrecordid>eNp9kU1r3DAQhk1poSHNof9A0FMLTjSSbFnHZWkTw0KhH_QoxvI41rKxXElbSH99lWzox6W6jBieeWDmrarXwC-Bt_IKLhtulObyWXUmoOlqKUT7_K__y-oipT0vTxngnTqr5u2MEV2m6H9i9mFhYWK4sH7ZpKtr_DywfL9S3fcsHVeKB8zZO2IDxugpsnUOOYyUyeUQWShEkSy3zC8sz8R23_pPbAx36JdX1YsJD4kunup59fXD-y_bm3r38brfbna1U0LnetRDq_Vk1Gh0x4EUglSygVbhNCgg2bSik1waZbgTCBxgcuBEmQY0juR51Z-8Y8C9XaO_w3hvA3r72Ajx1mIsOxzIkiZjNKexG50aRGeIBkEkyhGbRo68uN6eXDMe_lHdbHb2occFtKLl-gcU9s2JXWP4fqSU7T4c41JWtUKIRgkjuPpjdDGkFGn6rQVuHzK0YJ8yLOy7E5ucz4_Z_Af-BVB_mIg</addsrcrecordid><sourcetype>Open Website</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2225429204</pqid></control><display><type>article</type><title>Characterization of an InAs/GaSb type-II superlattice barrier photodetector operating in the LWIR domain</title><source>AIP Open Access Journals</source><source>Free Full-Text Journals in Chemistry</source><creator>Alchaar, R. ; Rodriguez, J. B. ; Höglund, L. ; Naureen, S. ; Christol, P.</creator><creatorcontrib>Alchaar, R. ; Rodriguez, J. B. ; Höglund, L. ; Naureen, S. ; Christol, P.</creatorcontrib><description>In this paper, structural, optical and electrical characterizations of longwave infrared barrier detectors based on the InAs/GaSb superlattice are reported and analyzed. The fabricated detectors exhibited a 50% cut-off wavelength around 10.5 μm at 80K measured by photoluminescence and spectral response. The dark current density was 8.4×10-4 A/cm2 at 80K and a performance analysis combining spectral response, dark current-voltage characteristic and capacitance-voltage measurement curves was performed to determine the operating bias and the dark current regimes at different biases. Dark current simulations were also performed to better understand limiting dark current mechanisms of the device performance.</description><identifier>ISSN: 2158-3226</identifier><identifier>EISSN: 2158-3226</identifier><identifier>DOI: 10.1063/1.5094703</identifier><identifier>CODEN: AAIDBI</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Current voltage characteristics ; Cut off wavelength ; Dark current ; Electrical measurement ; Electronics ; Engineering Sciences ; Infrared detectors ; Micro and nanotechnologies ; Microelectronics ; Optics ; Photoluminescence ; Photonic ; Spectral sensitivity ; Superlattices</subject><ispartof>AIP advances, 2019-05, Vol.9 (5), p.055012-055012-8</ispartof><rights>Author(s)</rights><rights>2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).</rights><rights>Attribution</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c427t-d7b677f94d97801e4a13435164afb41e356283039490c2a1011fc1c2c421a9ce3</citedby><cites>FETCH-LOGICAL-c427t-d7b677f94d97801e4a13435164afb41e356283039490c2a1011fc1c2c421a9ce3</cites><orcidid>0000-0002-1930-1984 ; 0000-0002-5208-204X ; 0000-0002-4734-4957</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/adv/article-lookup/doi/10.1063/1.5094703$$EHTML$$P50$$Gscitation$$Hfree_for_read</linktohtml><link.rule.ids>230,314,780,784,885,27890,27924,27925,76408</link.rule.ids><backlink>$$Uhttps://hal.science/hal-02162607$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Alchaar, R.</creatorcontrib><creatorcontrib>Rodriguez, J. B.</creatorcontrib><creatorcontrib>Höglund, L.</creatorcontrib><creatorcontrib>Naureen, S.</creatorcontrib><creatorcontrib>Christol, P.</creatorcontrib><title>Characterization of an InAs/GaSb type-II superlattice barrier photodetector operating in the LWIR domain</title><title>AIP advances</title><description>In this paper, structural, optical and electrical characterizations of longwave infrared barrier detectors based on the InAs/GaSb superlattice are reported and analyzed. The fabricated detectors exhibited a 50% cut-off wavelength around 10.5 μm at 80K measured by photoluminescence and spectral response. The dark current density was 8.4×10-4 A/cm2 at 80K and a performance analysis combining spectral response, dark current-voltage characteristic and capacitance-voltage measurement curves was performed to determine the operating bias and the dark current regimes at different biases. Dark current simulations were also performed to better understand limiting dark current mechanisms of the device performance.</description><subject>Current voltage characteristics</subject><subject>Cut off wavelength</subject><subject>Dark current</subject><subject>Electrical measurement</subject><subject>Electronics</subject><subject>Engineering Sciences</subject><subject>Infrared detectors</subject><subject>Micro and nanotechnologies</subject><subject>Microelectronics</subject><subject>Optics</subject><subject>Photoluminescence</subject><subject>Photonic</subject><subject>Spectral sensitivity</subject><subject>Superlattices</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>AJDQP</sourceid><sourceid>DOA</sourceid><recordid>eNp9kU1r3DAQhk1poSHNof9A0FMLTjSSbFnHZWkTw0KhH_QoxvI41rKxXElbSH99lWzox6W6jBieeWDmrarXwC-Bt_IKLhtulObyWXUmoOlqKUT7_K__y-oipT0vTxngnTqr5u2MEV2m6H9i9mFhYWK4sH7ZpKtr_DywfL9S3fcsHVeKB8zZO2IDxugpsnUOOYyUyeUQWShEkSy3zC8sz8R23_pPbAx36JdX1YsJD4kunup59fXD-y_bm3r38brfbna1U0LnetRDq_Vk1Gh0x4EUglSygVbhNCgg2bSik1waZbgTCBxgcuBEmQY0juR51Z-8Y8C9XaO_w3hvA3r72Ajx1mIsOxzIkiZjNKexG50aRGeIBkEkyhGbRo68uN6eXDMe_lHdbHb2occFtKLl-gcU9s2JXWP4fqSU7T4c41JWtUKIRgkjuPpjdDGkFGn6rQVuHzK0YJ8yLOy7E5ucz4_Z_Af-BVB_mIg</recordid><startdate>201905</startdate><enddate>201905</enddate><creator>Alchaar, R.</creator><creator>Rodriguez, J. B.</creator><creator>Höglund, L.</creator><creator>Naureen, S.</creator><creator>Christol, P.</creator><general>American Institute of Physics</general><general>American Institute of Physics- AIP Publishing LLC</general><general>AIP Publishing LLC</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>1XC</scope><scope>VOOES</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0002-1930-1984</orcidid><orcidid>https://orcid.org/0000-0002-5208-204X</orcidid><orcidid>https://orcid.org/0000-0002-4734-4957</orcidid></search><sort><creationdate>201905</creationdate><title>Characterization of an InAs/GaSb type-II superlattice barrier photodetector operating in the LWIR domain</title><author>Alchaar, R. ; Rodriguez, J. B. ; Höglund, L. ; Naureen, S. ; Christol, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c427t-d7b677f94d97801e4a13435164afb41e356283039490c2a1011fc1c2c421a9ce3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Current voltage characteristics</topic><topic>Cut off wavelength</topic><topic>Dark current</topic><topic>Electrical measurement</topic><topic>Electronics</topic><topic>Engineering Sciences</topic><topic>Infrared detectors</topic><topic>Micro and nanotechnologies</topic><topic>Microelectronics</topic><topic>Optics</topic><topic>Photoluminescence</topic><topic>Photonic</topic><topic>Spectral sensitivity</topic><topic>Superlattices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Alchaar, R.</creatorcontrib><creatorcontrib>Rodriguez, J. B.</creatorcontrib><creatorcontrib>Höglund, L.</creatorcontrib><creatorcontrib>Naureen, S.</creatorcontrib><creatorcontrib>Christol, P.</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>AIP advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Alchaar, R.</au><au>Rodriguez, J. B.</au><au>Höglund, L.</au><au>Naureen, S.</au><au>Christol, P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization of an InAs/GaSb type-II superlattice barrier photodetector operating in the LWIR domain</atitle><jtitle>AIP advances</jtitle><date>2019-05</date><risdate>2019</risdate><volume>9</volume><issue>5</issue><spage>055012</spage><epage>055012-8</epage><pages>055012-055012-8</pages><issn>2158-3226</issn><eissn>2158-3226</eissn><coden>AAIDBI</coden><abstract>In this paper, structural, optical and electrical characterizations of longwave infrared barrier detectors based on the InAs/GaSb superlattice are reported and analyzed. The fabricated detectors exhibited a 50% cut-off wavelength around 10.5 μm at 80K measured by photoluminescence and spectral response. The dark current density was 8.4×10-4 A/cm2 at 80K and a performance analysis combining spectral response, dark current-voltage characteristic and capacitance-voltage measurement curves was performed to determine the operating bias and the dark current regimes at different biases. Dark current simulations were also performed to better understand limiting dark current mechanisms of the device performance.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5094703</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-1930-1984</orcidid><orcidid>https://orcid.org/0000-0002-5208-204X</orcidid><orcidid>https://orcid.org/0000-0002-4734-4957</orcidid><oa>free_for_read</oa></addata></record>
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subjects Current voltage characteristics
Cut off wavelength
Dark current
Electrical measurement
Electronics
Engineering Sciences
Infrared detectors
Micro and nanotechnologies
Microelectronics
Optics
Photoluminescence
Photonic
Spectral sensitivity
Superlattices
title Characterization of an InAs/GaSb type-II superlattice barrier photodetector operating in the LWIR domain
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T19%3A52%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Characterization%20of%20an%20InAs/GaSb%20type-II%20superlattice%20barrier%20photodetector%20operating%20in%20the%20LWIR%20domain&rft.jtitle=AIP%20advances&rft.au=Alchaar,%20R.&rft.date=2019-05&rft.volume=9&rft.issue=5&rft.spage=055012&rft.epage=055012-8&rft.pages=055012-055012-8&rft.issn=2158-3226&rft.eissn=2158-3226&rft.coden=AAIDBI&rft_id=info:doi/10.1063/1.5094703&rft_dat=%3Cproquest_scita%3E2225429204%3C/proquest_scita%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c427t-d7b677f94d97801e4a13435164afb41e356283039490c2a1011fc1c2c421a9ce3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2225429204&rft_id=info:pmid/&rfr_iscdi=true