High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO3/SrZrO3 heterostructures

By inserting a SrZrO3 buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement of the electron mobility in La:BaSnO3 films. A room temperature mobility of 140 cm2 V−1s−1 is achieved for 25-nm-thick fil...

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Bibliographic Details
Published in:APL materials 2019-04, Vol.7 (4), p.041119-041119-5
Main Authors: Nono Tchiomo, Arnaud P., Braun, Wolfgang, Doyle, Bryan P., Sigle, Wilfried, van Aken, Peter, Mannhart, Jochen, Ngabonziza, Prosper
Format: Article
Language:English
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Summary:By inserting a SrZrO3 buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement of the electron mobility in La:BaSnO3 films. A room temperature mobility of 140 cm2 V−1s−1 is achieved for 25-nm-thick films without any postgrowth treatment. The density of threading dislocations is only 4.9 × 109 cm−2 for buffered films prepared on (110) TbScO3 substrates by pulsed laser deposition.
ISSN:2166-532X
2166-532X
DOI:10.1063/1.5094867