Vertical geometry 33.2 A, 4.8 MW cm2 Ga2O3 field-plated Schottky rectifier arrays

• Published in: Applied physics letters 2019-06, Vol.114 (23)
• Main Authors: Yang, Jiancheng, Xian, Minghan, Carey, Patrick, Fares, Chaker, Partain, Jessica, Ren, Fan, Tadjer, Marko, Anber, Elaf, Foley, Dan, Lang, Andrew, Hart, James, Nathaniel, James, Taheri, Mitra L., Pearton, S. J., Kuramata, Akito
• Format: Article
• Language: English
• Subjects: Applied physics; Arrays; Carrier density; Electric potential; Electron beams; Epitaxial growth; Epitaxial layers; Gallium oxides; Recovery time; Rectifiers; Substrates
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.5100256

The performance of arrays consisting of 21 β-Ga2O3 field-plated rectifiers fabricated on thick epitaxial layers (n-type carrier concentration ∼1.6 × 1016 cm−3) grown on conducting substrates (carrier concentration 3 × 1019 cm−3) is reported. We show that by interconnecting the output of 21 smaller (0.4 × 0.4 mm2 to 1 × 1 mm2, total area 0.09 cm2) individual rectifiers using e-beam deposited Au, we can achieve a high total forward output current of 33.2 A, at 4.25 V in the single-sweep voltage mode, and a low forward turn-on voltage of 2.9 V (defined at 100 A cm−2) and maintain a reverse breakdown voltage of 240 V (defined at 1 μA cm−2). The current density was 376 A cm−2, and the on-state resistance was 0.012 Ω cm2. The total forward current was 10 A at 1.9 V and 22 A at 3 V. The power figure-of-merit for the array, VB2/RON, was 4.8 MW cm−2, with a reverse recovery time of individual rectifiers of 32 ns. The on/off ratio of the rectifier array was in the range of 105–1010 for +1 V/−1 to −100 V.