Improved optoelectronic properties in solution-processed epitaxial rare-earth-doped BaSnO3 thin films via grain size engineering

Epitaxial BaSnO3 (BSO) thin films doped with different rare-earth elements (La, Pr, and Nd) were prepared by a simple solution deposition method. Grain size engineering through processing was achieved to tune both lateral and vertical grain sizes, resulting in obvious increments in carrier mobility....

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2019-10, Vol.115 (16)
Main Authors: Wei, R. H., Hu, L., Shao, C., Tang, X. W., Luo, X., Dai, J. M., Yang, J., Song, W. H., Zhu, X. B., Sun, Y. P.
Format: Article
Language:English
Subjects:
Applied physics
Barium stannate
Carrier mobility
Grain size
Optoelectronics
Rare earth elements
Silicon
Thin films
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Epitaxial BaSnO3 (BSO) thin films doped with different rare-earth elements (La, Pr, and Nd) were prepared by a simple solution deposition method. Grain size engineering through processing was achieved to tune both lateral and vertical grain sizes, resulting in obvious increments in carrier mobility. Improved performance with the room-temperature mobility exceeding 35 cm2 V−1 s−1 and resistivity as low as 0.55 mΩ cm was realized. The results will open a low-cost route for preparation of large-area BSO thin films with improved optoelectronic properties through the solution method.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5115526