Visible-light-mediated carrier type modulation at the LaAlO3/SrTiO3 interface

A LaAlO3/SrTiO3 (LAO/STO) heterointerface with the sheet charge density of electrons on the order of magnitude of 1013 e/cm2 was obtained by depositing a 10 unit-cell LAO layer on the TiO2-teminated STO substrate. An obvious persistent photoconductivity effect was observed for the as-prepared LAO/ST...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2019-10, Vol.115 (15)
Main Authors: Su, Siyu, Gao, Haobin, Shen, Yifan, Peng, Wei, Zhu, Xiaohong
Format: Article
Language:English
Subjects:
Applied physics
Charge density
Luminous intensity
Magnetoresistance
Magnetoresistivity
Photoconductivity
Strontium titanates
Substrates
Thin films
Titanium dioxide
Unit cell
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A LaAlO3/SrTiO3 (LAO/STO) heterointerface with the sheet charge density of electrons on the order of magnitude of 1013 e/cm2 was obtained by depositing a 10 unit-cell LAO layer on the TiO2-teminated STO substrate. An obvious persistent photoconductivity effect was observed for the as-prepared LAO/STO heterointerface. By way of Hall-like coefficient and magnetoresistance measurements at different light power intensities, it is demonstrated that the mechanism of magnetoresistance changes with the increase in light power density on the sample; more importantly, when the light power intensity is increased to a specific value, 270 mW in this case, the carrier type of the interface is tailored from n-type to p-type, which is probably ascribed to the photoinduced p-type hole dopants and has never been reported at the LAO/STO interface before, thus providing important insights into a controllable heterointerface for oxide-based thin film electronics.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5119161