Room-temperature angular-dependent topological Hall effect in chiral antiferromagnetic Weyl semimetal Mn3Sn

Chiral antiferromagnetic (AFM) Weyl semimetal Mn3Sn shows a large anomalous Hall effect (AHE) around room temperature, due to the Berry curvature generated by Weyl nodes in electronic dispersions. Here, we study the temperature- and angular-dependent Hall effect and magnetic measurement in single-cr...

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Bibliographic Details
Published in:Applied physics letters 2019-09, Vol.115 (10)
Main Authors: Yan, J., Luo, X., Lv, H. Y., Sun, Y., Tong, P., Lu, W. J., Zhu, X. B., Song, W. H., Sun, Y. P.
Format: Article
Language:English
Subjects:
Antiferromagnetism
Applied physics
Coercivity
Curvature
Domain walls
Electromagnetism
Hall effect
Magnetic anisotropy
Magnetic measurement
Magnetism
Room temperature
Single crystals
Spintronics
Temperature dependence
Texture
Topology
Transport properties
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Summary:Chiral antiferromagnetic (AFM) Weyl semimetal Mn3Sn shows a large anomalous Hall effect (AHE) around room temperature, due to the Berry curvature generated by Weyl nodes in electronic dispersions. Here, we study the temperature- and angular-dependent Hall effect and magnetic measurement in single-crystalline Mn3Sn. There are some intriguing phenomena: first, a large hysteretic-type AHE has been observed only above 270 K, while the coercivity is around 300 Oe and independent of temperature. Second, the temperature- and angular-dependent topological Hall effect is obtained, which may stem from the real space topological spin texture. Third, the coercivity extracted from the angular-dependent AHE is well fitted with the Stoner-Wohlfarth model, which reflects the evolution of domain walls and magnetic anisotropy. Thus, it shows that not only the topological structure in momentum space but also the real space topological spin texture plays an important role in anomalous transport properties of Mn3Sn. Our work pushes forward to the realization of room temperature AFM spintronics and paves the way toward the possible devices based on the unconventional Hall effect.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5119838